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...Switched High Frequency Circuits Package TO-220 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds ...
... 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)...
...Switching Power Package 8-DFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 34A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min R...
... 52mOhm @ 4A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max)...
...Switch Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10...
..., Vgs 50mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)...
... 40mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 595 pF @...
...switch Package 8-PowerTDFN FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 24A (Tc) Drive Voltage (Max Rds On, Min Rds ...
...Switch Package SOT-23 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V ...
..., Vgs 135mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 220 pF @...
...switching power applications Package TO-220 -60 V, -12 A, 135 Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ ...
...Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @...
... 16mOhm @ 9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max)...
...Switching Applications N-Channel 30 V 8.2A (Ta) 44A (Tc) 790mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V,...
...switching speed FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max...
...Switching Low Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 36A (Ta), 100A (Tc) Drive Voltage (Max Rds On,...
...Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds O...
... 4.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8410 pF @...
...RoHS Compliant Product Specifications: • VDS (V): 100V • ID (A): 13A • RDS(on) (mΩ): 4.8mΩ • VGS (V): -20V • Qg (Max) (nC): 27nC • Power Dissipation (W): 11.4W • Operating Temperature (°C): -55°C ~ 175°C Pro...
... an RDS(on) of 0.045 Ω, a Qg of 120 nC, and a Ciss of 1183 pF. This MOSFET has a maximum operating temperature range of -55°C to 175°C. It is an ideal choice for high frequency switching applications. Featur...