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G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching l...
... Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Specifications Product Attribute Attribute Value Product Ca...
...BIPOLAR TRANSISTOR ELECTRONIC COMPONENTS SURFACE MOUNT,STANDING Package Type: Surface Mount,Standing Warranty: Global 180 Days Return Shipment: DHL,TNT Package: Standard Package High Light: BCX53 Bipolar Tra...
... bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figur...
... Overview The SS8550 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It offers high collector current capability and is complementary to the SS8050...
... IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros...
...Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, powe...
Silicon NPN Power Transistors 2SC4883 2SC4883A DESCRIPTION With TO-220F package Complement to type 2SA1859/1859A APPLICATIONS For audio output driver and TV velocity-modulation applications Absolute maximum ...
NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 meta...
...NPN Silicon Transistor 0.5A Power Transistor 300V 20W Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • T...
Quick Details Place of Origin: Japan Model Number: 2SA1943 Description: TRANS NPN 230V 15A TO-264 Package Type: Throught Hole Mounting Type: Through Hole Supplier Type: Original manufacturer Operating Temperatu...
... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.......
... Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247 Mounting Style: Through Hole Collector- Emitter Voltage VCEO Max: 600 V Collector-......
...Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Categor...
...Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Categor...
2SD1047 Silicon NPN Power Transistors DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PIN DESCRIPTION 1 ......
Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION · ·With TO-220C package ·Complement to type TIP32/32A/32B/32C APPLICATIONS ·Medium ......
Voltage - Collector Emitter Breakdown (Max):230V Current - Collector (Ic) (Max):15A Transistor Type : PNP Mounting Type:Through Hole Package / Case :TO-3P Deli electronics tehcnology co ltd www.icmemorychip.com...
TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device code Solid dot=Green ......
TO-220-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO ......