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Product Overview The IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction ...
Product Overview The IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coeff...
Product Overview The IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coef...
Product Overview The IRG7PH46UD-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction lo...
Product Overview The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient i...
Product Overview The SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature co...
Product Overview The IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in V...
Product Overview The STGWA50M65DF2 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coeff...
Product Overview This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, providing superior performance in demanding switching applications with low...
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching .....
Product Overview This Insulated Gate Bipolar Transistor (IGBT) features an Ultra Field Stop Trench construction, offering a robust and cost-effective solution for demanding switching applications. It ......
TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter ......
TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter ......
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
Product Detail Packaging Tray Part Status Active Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 30A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30...
IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP 5 Reverse Conducting IGBTs are optimized for full-rated hard ...
Texas Instruments LM2904DRG4 Operational Amplifier Op Amp Dual General Purpose Op Amp lFeatures 1) Built-In Biasing Resistor 2 ) Built-in bias resistors enable the configuration of an inverter circuit without c...
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Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...