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...NPN digital transistor featuring built-in bias resistors, simplifying circuit design and reducing component count and manufacturing processes. It is housed in a compact DFN1x0.6-3L package.Product Attributes...
Digital Transistor (NPN) The DTC114EM/DTC114EE/DTC114EUA/DTC114EKA/DTC114ECA/DTC114ESA series are NPN digital transistors featuring built-in bias resistors. This design eliminates the need for external input re...
... count and simplifying circuit design. They are ideal for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in...
... devices (SMD). These transistors feature built-in bias resistors, which reduce component count, minimize pick-and-place costs, and simplify circuit design. They are AEC-......
...NPN Silicon Epitaxial Planar Transistors designed for general-purpose applications. These transistors are manufactured using epitaxial planar technology, ensuring reliable performance. Product Attributes Bra...
...s is a silicon bipolar epitaxial planar NPN-PNP matched power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter vo...
...s is a silicon bipolar epitaxial planar NPN-PNP paired power amplifier transistor designed for high-fidelity audio applications. It offers a large collector current of Ic=16A and a high collector-emitter vol...
.... This device is AEC-Q101 qualified, making it suitable for automotive applications.Product Attributes Brand: Toshiba Type: Silicon PNP/NPN Epitaxial Transistor Certifications:...
NPN PNP Transistor Texas Instruments/TI TPS54418ARTER Vin (Min) (V) 2.95 Vin (Max) (V) 6 Vout (Min) (V) 0.8 Vout (Max) (V) 4.5 Iout (Max) (A) 4 ......
NPN PNP Transistor Texas Instruments/TI TPS54418ARTER Vin (Min) (V) 2.95 Vin (Max) (V) 6 Vout (Min) (V) 0.8 Vout (Max) (V) 4.5 Iout (Max) (A) 4 ......
...NPN Power Transistor designed for power amplifier and vertical output applications. It features a wide area of safe operation, a collector-emitter breakdown voltage of 150V (Min), and serves as a complement ...
...NPN switching transistor designed for general switching and amplification applications. Housed in a compact SOT23 Surface-Mounted Device (SMD) plastic package, this AEC-Q101 qualified component offers a coll...
...NPN Power Transistor designed for high voltage and general purpose applications. It features a Collector-Emitter Sustaining Voltage of 300V (Min), a DC Current Gain of 100 (Min) @ IC=50mA, and a low Collecto...
... (Max) at IC = 4A. It is a complement to the 2N2955 type.Product Attributes Brand: JSMICRO Semiconductor Model: 2N3055 Material: Silicon NPN Origin:...
...NPN silicon transistors designed for various electronic applications. They offer reliable performance with a range of electrical characteristics suitable for switching and amplification tasks.Product Attribu...
...-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers a high collector ...