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Product Overview The BC846Q thru BC848Q series are NPN general purpose transistors designed for switching and amplification applications. These transistors feature epoxy that meets UL-94 V-0 flammability rating...
Product Overview High Voltage Transistor, NPN Plastic-Encapsulate Transistors in SOT-23 package. Features include a high Collector-Emitter Voltage of 350V and a maximum Collector Dissipation of 250mW. Suitable ...
... saturation voltage, high current capability, and higher efficiency leading to less heat generation and reduced printed-circuit board requirements. This transistor complements the PBSS5350X.Product Attribute...
..., making it a complementary part to the S8550. This transistor is suitable for various high collector current applications.Product Attributes Brand: JSMICRO Semiconductor Material: Silicon Epitaxial Planar ....
... The MJ15022/15024G are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature an excellent safe operating area and high DC current gain. Thes...
Product Overview The S9013 is an NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and is complementary to the S9012 transisto...
... Overview The MPS2222A is a general-purpose NPN silicon transistor designed for various electronic applications. It offers complementary PNP type availability with the MPS2907A. This transistor is suitable f...
Product Overview The S9018 is an NPN epitaxial silicon transistor designed for general-purpose applications. It features a high current gain bandwidth product and a power dissipation of 200mW. This transistor i...
...like AEC-Q101 qualification and PPAP capability for the 'S-' prefix variants, making them suitable for automotive and other demanding applications. These transistors are ideal for use in linear voltage regul...
LESHAN RADIO COMPANY, LTD. General Purpose Transistors - LBC846ALT1G Series The LBC846ALT1G Series NPN Silicon transistors are designed for general-purpose applications. They offer robust performance with high ...
... and S-L9013QLT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified ...
... and other applications requiring unique site and control change requirements, including AEC-Q101 qualification and PPAP capability. These transistors comply with RoHS requirements and are Halogen Free.Produ...
Product Overview LESHAN RADIO COMPANY, LTD. offers NPN Silicon General Purpose Transistors in a SOT-23 package. These transistors are designed for various electronic applications requiring reliable switching an...
... change requirements. These transistors are AEC-Q101 Qualified and PPAP Capable, featuring epitaxial planar construction. Key advantages include low Cob (2pF ......
.... The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.Product Attributes Brand: Leshan Radio Company, LTD. Material: Silicon Cert...
Product Overview The L9014QLT1G is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014. This transistor is suitable for various electronic applications requ...
... and S-LMBT3904LT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualifie...
...Overview The ROHM 2SD1898 / 2SD1733 are NPN middle power transistors designed for driver applications. They offer low VCE(sat) of 0.4V Max. (IC/IB=500mA/20mA) and are available in complementary PNP types. Th...
... are NPN power transistors designed for high voltage applications. They offer a high breakdown voltage of 160V, low collector output capacitance, and a high transition frequency, making them suitable for var...
...-purpose NPN silicon transistor designed for high voltage applications. It features a high Collector-Emitter Voltage (VCEO) of 400V and a continuous Collector Current (Ic) of 200mA, with a Power Dissipation ...