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Product Listing: Type: N-Channel MOSFET Model: IRFP150MPBF Package: TO-247AC Drain Source Voltage: 100V Continuous Drain Current: 15A Drain Source On-State Resistance: 0.047 ohm Power Dissipation: 49W Rise and ...
Product Listing: Type: N-Channel MOSFET Model: IRFP150MPBF Package: TO-247AC Drain Source Voltage: 100V Continuous Drain Current: 15A Drain Source On-State Resistance: 0.047 ohm Power Dissipation: 49W Rise and ...
... Time (tr): 10ns Pulsed Drain Current (Idm): 75A Drain-Source On-Resistance (Rds): 0.042 Ohm Power Dissipation (Pd): 350W Operating and Storage Temperature: -55°C to +175°C Why buy from us >>> Fast / Safely ...
... Current (Id): 68A Gate-Source Voltage (Vgs): 10V Pulsed Drain Current (Idm): 136A RDS(on): 0.0065 Ohm Power Dissipation (Pd): 58W Operating Temperature: -55°C to 150°C Why buy from us >>> Fast / Safely / Co...
... MOSFET Product Type: MOSFET Voltage Rating: 30 Volts Drain-Source Voltage: 25V RDS (on): 0.14 Ohms Power Dissipation: 5.6 Watts Configuration: N-Channel Polarity: Non-Polar Maximum Operating Temperature: +1...
... to carry and install. > High stabliity. > Bright and clear sound effect. SPECIFICATIONS Model No. DTA2.5 DTA2.6 DTA2.8 Output power at 4 ohm stereo 1kHz(HIA) with0.5% THD (per channel) 750Wx2 1000Wx2 1200Wx...
.... It delivers 1480W × 4 channels (4 Ω output) using a switching power supply. Each channel is equipped with an independent power section. It can be mounted in an EIA Standard equipment rack (1.5 unit size). ...
...20°C 0.092 ohms max D.C. RESISTANCE 7-12 tie(7+8+9,10+11+12),@20°C 0.036ohms max D.C. RESISTANCE 5-6 @20°C 0.007 ohms max INDUCTANCE 1-3 tie(1+2,3+4),150KHz,100mVAC,Ls 9/07uH min. SATURATION CURRENT 20% roll...
...Power Over Ethernet Transformer ELECTRICAL SPECIFICATIONS @25°C unless otherwise noted: PARAMETER TEST CONDITIONS VALUE D.C. RESISTANCE 3-5 @20°C 0.043 ohms max D.C. RESISTANCE 2-1 @20°C 0.130ohms max D.C. R...
...-182DG Power Over Ethernet Transformer Led Driver Electronic Transformer ELECTRICAL SPECIFICATIONS @ 25°C UNLESS OTHERWISE NOTED: PARAMETER TEST COMDITIONS VALUE D.C. RESISTANCE 1-3 @20°C 0.315 OHMS ±10%. D....
...ohms max. DIELECTRIC RATING: 1000VDC, 1 MINUTE TESTED BY APPLYING 1250VDC FOR 1 SECOND BETWEEN 1 - 6 (TIE 4+5). INDUCTANCE: 10.0uH ±10% , 10KHz , ......
...Power 50W 8 Way Microstrip Power Divider/ Power Splitter RF power splitter/dividers are RF site components / passive devices that couple a defined amount of power in a transmission line to a port, the signal...
...Power 50W 8 Way Microstrip Power Divider/ Power Splitter RF power splitter/dividers are RF site components / passive devices that couple a defined amount of power in a transmission line to a port, the signal...
Excellent Thermal Stability WSCR Series SMT Wire Wound / SMD Power Inductor FEATURES: Various high power inductors are superior to be high saturation for surface mounting . Inductance Range: 10uH - 470uH Rated ...
...Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The ...
... to be arranged in the load banks. 3.Our high power resistor personalized design to better meet your requests,so as to greatly save space and cost. Features 1.The product has the characteristic with solid st...
Excellent Thermal Stability WSCR Series SMT Wire Wound / SMD Power Inductor FEATURES: Various high power inductors are superior to be high saturation for surface mounting . Inductance Range: 10uH - 470uH Rated ...
... can control electrical circuit to adjust power output and voltage from time to time, and to respond the request of signal and load,so it can get the best power match under the wide range of load,so to ensur...
...Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The ...