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Product: IRFU024NPBF N-Channel MOSFET Parameters: •Voltage Rating: 30V •Continuous Drain Current: 4.6A •Max Power Dissipation: 12W •RDS(on): 0.022 ohm •Pulsed Drain Current: 8.4A •Threshold Voltage: 2.2V •Rise ...
... MOSFET with an on-resistance of 0.023 Ohms and a maximum gate threshold voltage of 4V. The device has a continuous drain current of 23A and a maximum power dissipation of 172W. It is suitable for general pu...
...: - Configuration: N-Channel - Vds (Max): 650V - Rds(on) (Max): 0.5 Ohm - ID (Max): 10A - Packaging: TO-220 - Operating Temperature: -55°C to 150°C Why buy from us >>> Fast / Safely / Conveniently • SKL is a...
Product Name: IRF7807ZTRPBF MOSFET Parameters: -VDS (Drain-Source Voltage): 100V -VGS (Gate-Source Voltage): 10V -ID (Continuous Drain Current): 5.6A -RDS(on) (Drain-Source On-Resistance): 0.0085 Ohms -Polarity...
...10A Rds On (Max) @ Id, Vgs: 0.055 Ohm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250uA Gate Charge (Qg) @ Vgs: 14nC @ 10V Power - Max: 37W Operating Temperature: -55°C to 175°C (TJ) Pulsed Drain Current: 20A Why bu...
...Single •Mounting Type: Surface Mount •Packaging: Tube •Pd - Power Dissipation: 170 W Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our b...
... Temperature Operation Specifications: • Drain-Source Voltage (VDS): 28V • Drain-Source On-State Resistance (RDS(ON)): 0.01 ohm • Gate-Source Threshold Voltage (VGS(th)): 4V • Input Capacitance (Ciss): 450pF...
Product Listing: IRFL024NTRPBF – N-Channel Enhancement Mode Power MOSFET Features: • Low On-Resistance RDS(on) = 0.0095 ohm • Low Gate Charge Qg = 6.2 nC • High Drain Current Capability ID = 2.4A • Low Input Ca...
... – International Rectifier MOSFET Power Electronics Product Parameters: • Technology: MOSFET • Package Type: PowerPAK® SO-8 • Maximum Continuous Drain Current: 24A • Maximum Drain Source Voltage: 30V • RDS(o...
...Power Electronics Product Features: • 900V N-Channel MOSFET • 30A RDS(on) • Low Gate Charge • Low Miller Capacitance • High Speed Switching • Low Qg and Qgd • 100% UIS Tested • RoHS Compliant Specifications:...
... Current (Id): 10A Rds On (max) @ Id, Vgs: 0.068 Ohm @ 10A, 10V Vgs(th) (max) @ Id: 4V @ 250μA Gate-Source Voltage (Vgs): ±20V Power Dissipation (Pd): 40W Operating Temperature: -55°C to 175°C Mounting Style...
LMR12007XMK Power Management IC Features: - Wide input voltage range from 3V to 40V - 0.4 ohm, 55A, N-Channel MOSFET - Current Limit, Over Voltage Protection, Short Circuit Protection - Adjustable Output Voltag...
N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Features Order codes VDSS @TJ max. RDS(on) max. ......
...Al203 content over 95%). Coating materials: low temperature vitreous enamel. Power Range:5W-25WResistance range: 100 0hm-100G Ohm. Resistance tolerance:+1%-+10%. Resistance temperature coefcient: +25PPM-+200...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
..., can directly drive 4 ohm, 8 ohm speakers, large output power, enough energy, good sound quality. Class D digital power board without LC filtering is unique, USB can directly use the computer's power supply...
... ratings Ferrite core gives flat L vs I curve AEC-Q200 Grade 3 (−40°C to +85°C) Low cost, high current power inductors 39 inductance values; 12 µH to 18 mH Electrical Properties: Part number Inductance ±10% ...
...Power Module Description: The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF ...
... KT-800 KT-1000 KT-1300 8Ω stereo output power 4x600W 4x800W 4x1000W 4x1300W 4Ω stereo output power 4x890W 4x1100W 4x1500W 4x1820W S/N Ratio 105dB 105dB 103dB 102dB Slew rate 17V/uS 25V/uS 28V/uS 32V/uS ......