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..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
... • Output Transistor Safe Operating Area Protection Description The KA78XXE/KA78XXAE series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output ......
...24V • Thermal Overload Protection • Short Circuit Protection • Output Transistor Safe Operating Area Protection General Description The KA78XXE/KA78XXAE series of three-terminal positive regulator are availa...
...transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitte...
PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* TA = 25C unles...
.... It can make front-and-rear kinking, pushing leads forward or back.etc. It is manual type machine, so operator needs to manually put components for forming. One machine can work with various molds, easy to ...
18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...
... Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for...
6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
...Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous Drain Current 15 A Maximum Drain Source Voltag...
BTA40, BTA41 and BTB41 Series DESCRIPTION Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as ...
... Tube Transistor Rectifier APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity protection applications FEATURES Common cathode structure Low power loss, high efficiency High...
6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
...Voltage IGBT IXYS IXGA20N250HV High Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit withstanding capability. The IXGA20N250H...
NTZD3154NT1G Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25C 540mA Rds On (Max) @ Id, Vgs 550 mOhm @ ...
SI7216DN-T1-GE3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25C 6A Rds On (Max) @ Id, Vgs 32 mOhm @ 5...
SI7216DN-T1-E3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25C 6A Rds On (Max) @ Id, Vgs 32 mOhm @ 5A...
BUK7K6R2-40EX Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25C 40A Rds On (Max) @ Id, Vgs 5.8 mOhm @ 2...
SI7272DP-T1-GE3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25C 25A Rds On (Max) @ Id, Vgs 9....
SI7288DP-T1-GE3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25C 20A Rds On (Max) @ Id, Vgs 19 mOhm @ ...