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Total 6659 products for p type semiconductor Manufacture & Suppliers

3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics

... GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. Gallium arsenide is ...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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3inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates

...Type GaAs substrates 425um 2inch 3inch 4inch 6inch VGF method N-Type un-doped GaAs substrates 2degree off 675um SSP DSP GaAs wafers ---------------------------------------------------------------------------...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm Product introduction The 4H n-type Silicon Carbide (SiC) single crystal substrate is a critical semiconductor material widely utilized in power...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

... with good thermal conductivity and high temperature resistance, which is widely used in high-power and high-frequency electronic devices. P-type doping is achieved by introducing elements such as aluminum (...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

...Type For Communications and radar systems Diameter 150mm Prime Grade 6H-SiC (Hexagonal Silicon Carbide) is a wide bandgap semiconductor material with good thermal conductivity and high temperature resistance...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

... 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade 4H-P silicon carbide (SiC) is an important semiconductor material commonly used in high-temperature, high-frequency, and high-power elect...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Sic Silicon Carbide Wafer 5*5mm/10*10mm 4H-P Type Production Grade For Power Electronics

...-temperature, high-frequency, and high-power electronic devices. 4H-SiC is a type of its crystal structure that has a hexagonal lattice structure. The wide bandgap (approx. 3.26 eV) allows it to operate in h...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

... material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

...Conductive Type Zero MPD Production Grade 3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical and thermal properties, especially suitable for high-frequency, high-pow...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

... material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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5*5mm/10*10mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

... material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

... 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade 3C-N type silicon carbide (3C-SiC) substrate is a wide-bandgap semiconductor material based on the cubic crystal structure (3C), fabri...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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SIlicon Carbide Wafer 4inch dia x 350um 4H-N type P/R/D grade MOSEFTs/SBD/JBS

...350um 4H-N type P/R/D grade MOSEFTs/SBD/JBS Product description: 4inch x 350um±25um Silicon Carbide wafer with 4 degree ±0.5° toward plane cutting angle, doped to N-type conductivity. Being a third-generati...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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TGS8410-F00 Methane Gas Sensor New Metal Oxide Semiconductor

TGS8410-F00 Methane Gas Sensor New Metal Oxide Semiconductor Application Portable/pocket type methane gas detectors Battery operable/wireless gas detectors Leak detection for natural gas vehicles Leak detection...

ShenzhenYijiajie Electronic Co., Ltd.
Guangdong,China

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150KV Microfocus Xray Tube 17mm FOD Industrial Semiconductor Inspection

...Ray Tube L12161-07 43° Beam Angle 17mm FOD Industrial Semiconductor Inspection HAMAMATSU 150 kV MICROFOCUS X-RAY SOURCE L12161-07 FEATURES Focal spot size: 5 μm (at 4 W) -The sealed type X-ray tube provides ...

SHENZHEN WEIMING PHOTOELECTRIC CO.,LTD.
China

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5-Axis Linkage Tiltable Semiconductor Inspection Equipment with 60° Tiltable FPD and 530mm Table

5-Axis Linkage Tiltable Semiconductor Inspection Equipment — X6800 1. Key Advantages 1. Closed type X-ray tube, with more than 10000 hours lifetime, maintenance-free. 2 New generation 5” HD digital flat panel d...

SHENZHEN WEIMING PHOTOELECTRIC CO.,LTD.
China

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Rapid Multi-layer Semiconductor Inspection Equipment——X8800（3D/CT)

Rapid Multi-layer Semiconductor Inspection Equipment��X8800(3D/CT) 1. Product Advantages 1.1. Open type X-ray tube: No service life limit, only filament replacement required. 1.2. New generation 5�� HD digital f...

SHENZHEN WEIMING PHOTOELECTRIC CO.,LTD.
China

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Semiconductor Inspection Equipment with a 400*400mm Large Stage and 10kg Load Capacity——X8800（3D/CT)

Semiconductor Inspection Equipment with a 400*400mm Large Stage and 10kg Load Capacity��X8800(3D/CT) 1. Key Advantages 1.1. Open type X-ray tube: No service life limit, only filament replacement required. 1.2. ...

SHENZHEN WEIMING PHOTOELECTRIC CO.,LTD.
China

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P Type Semiconductor

Total 6659 products for p type semiconductor Manufacture & Suppliers

3inch 76.2mm N-Type S Doped Gallium Arsenide Wafer For Microelectronics

3inch VGF GaAs Wafers Research Test Grade N Type GaAs Substrates

2inch SIC Silicon Carbide Wafer 4H-N Type For MOS Device Dia 0.4mm

Sic Silicon Carbide Substrate 5.0*5.0mm Square 6H-P Type Thickness 350μm Zero Grade Dummy Grade

6Inch Sic Silicon Carbide Substrate 6H-P Type For Communications And Radar Systems Diameter 150mm Prime Grade

4Inch Silicon Carbide Sic wafer 4H-P Type Diameter 100mm Thickness 350 μm Prime Grade Research Grade

Sic Silicon Carbide Wafer 55mm/1010mm 4H-P Type Production Grade For Power Electronics

2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

Silicon Carbide Substrate 4'' Sic 3C-N Diameter 100mm Conductive Type Zero MPD Production Grade

Silicon Carbide Wafer 6Inch Sic Single Crystal 150mm Diameter 3C-N Type Suit for Communication Radar Systems

55mm/1010mm Silicon Carbide Wafer Thickness 350μm Sic 3C-N Type High Mechanical Strength Production Grade

2inch 4inch 6inch 8inch 5×5 mm 10×10 mm 4H-SiC Substrates 3C-N Type MOS Grade

SIlicon Carbide Wafer 4inch dia x 350um 4H-N type P/R/D grade MOSEFTs/SBD/JBS

TGS8410-F00 Methane Gas Sensor New Metal Oxide Semiconductor

150KV Microfocus Xray Tube 17mm FOD Industrial Semiconductor Inspection

5-Axis Linkage Tiltable Semiconductor Inspection Equipment with 60° Tiltable FPD and 530mm Table

Rapid Multi-layer Semiconductor Inspection Equipment——X8800（3D/CT)

Semiconductor Inspection Equipment with a 400*400mm Large Stage and 10kg Load Capacity——X8800（3D/CT)