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MT40A1G16KD-062E:E Products Description: • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • TC maximum up to 95°C – 64ms, 8192...
MT41K128M16JT-125 AAT:K Products Description: • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V • Differential bidirectional data strobe • 8n-bit prefetch architecture • Diff...
Computer Office Desk Easy Assembly Modern Office TableSimple Style Dining Table for Professional Use Special architectural design meets your requirement used both in office or at home. Sturdy metal legs with po...
Product Description: GCE high-voltage Battery Management System (BMS) master control box is an ideal solution for large-scale high-voltage battery energy storage systems and uninterruptible power supply (UPS) a...
Product Description: The GCE high-voltage battery management system (BMS) master control box is designed to cater to large-scale high-voltage battery energy storage systems and UPS applications. It features a d...
Product Description The machine is designed for grinding/polishing bottom edge of flat glass, with arris grinding. Conveyor adopts chain transmitting system consisting of special stretchy rubber pads. Our Advan...
Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequ...
Product Details [MCL] BROADBAND CW TWT LAB AMPLIFIER FOR RADAR, EMC AND EW TESTING The MT4100 broadband amplifier is leveraged around the field-proven MT4000 TWT architecture. With its modular design, compact a...
Product Details DDR3 SDRAM 2Gb: x4, x8, x16 DDR3 SDRAM Features • VDD= VDDQ= 1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differe...
Product Details FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture - T = Top B...
Product Details FEATURES � Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V � Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V � High speed data transfer rates with system frequ...
Product Details GENERAL DESCRIPTION The W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V ...
Product Details FEATURES � Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V � Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V � High speed data transfer rates with system frequ...
Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18...
Product Details [MCL] BROADBAND CW TWT LAB AMPLIFIER FOR RADAR, EMC AND EW TESTING The MT4100 broadband amplifier is leveraged around the field-proven MT4000 TWT architecture. With its modular design, compact a...
Product Details Description The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V...
Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18...
Product Details GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 con...
Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequ...
4U BMS Dimension: 4U BMS Interface Difinition: Application scenarios: â—Ž Battery Energy Storage System(BESS) â—Ž Off-grid energy storage â—Ž Data Center â—Ž Grid frequency modulation energy storage â—Ž Track power / tra...