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Pnp Bipolar Transistor

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Total 30079 products for pnp bipolar transistor Manufacture & Suppliers

insulated gate bipolar transistor HXY MOSFET AOK40B65M3 with low gate charge and high voltage rating

Product Overview The AOK40B65M3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to its positive temperature coefficient in ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET AOK60B65H2AL with advanced trench and field stop technology

Product Overview The AOK60B65H2AL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter

Product Overview The SPT40N120F1AT8TL is an Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI

Product Overview The IXYH40N120C3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance

Product Overview The AOK40B65HQ2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coeffic...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications

Product Overview The APT75GP120B2G is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (Vce(sat)), and easy paralle...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology

Product Overview The IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device

Product Overview The IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coeff...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IXGH40N120B2D1-HXY for solar inverters and energy storage systems

Product Overview The IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coef...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET IRG7PH46UD-EP-HXY with 1200V Voltage and 40A Current

Product Overview The IRG7PH46UD-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction lo...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High voltage insulated gate bipolar transistor HXY MOSFET NGTG35N65FL2WG-HXY with easy paralleling and low gate charge

Product Overview The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient i...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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650V 50A insulated gate bipolar transistor with low gate charge and easy paralleling HXY MOSFET SPT50N65F1A1T8TL-HXY

Product Overview The SPT50N65F1A1T8TL is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature co...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IGW40N120H3-HXY for UPS EV charger and solar inverter

Product Overview The IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in V...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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650V 50A Insulated Gate Bipolar Transistor HXY MOSFET STGWA50M65DF2-HXY with Low Gate Charge and Low EMI

Product Overview The STGWA50M65DF2 is a 650V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coeff...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Durable Insulated Gate Bipolar Transistor onsemi NGTB50N120FL2WG with 1200 Volt Rating and Pb Free Device Certification

Product Overview This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, providing superior performance in demanding switching applications with low...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor onsemi NGTB15N120FL2WG designed for high speed switching in welding and UPS

NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost-effective Field Stop II Trench construction, offering superior performance in demanding switching .....

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor onsemi NGTB25N120FL3WG with soft fast co packaged free wheeling diode included

Product Overview This Insulated Gate Bipolar Transistor (IGBT) features an Ultra Field Stop Trench construction, offering a robust and cost-effective solution for demanding switching applications. It ......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Transistor D669a 2SD669A Amplifier NPN Audio Power Amplifier Bipolar Transistor TO-126 D669a Transistor

High power NPN epitaxial planar transistor 2SD669A Product Description Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net...

Shenzhen Quanyuantong Electronics Co., Ltd.

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2N2219 ORiginal Through Hole Bipolar Transistors BJT 250MHz

2N4416 Original Through Hole JFET N - Channel - 30 V Low Ciss DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal...

Walton Electronics Co., Ltd.
China

Active Member

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IKWH50N65WR6XKSA1 Insulated Gate Bipolar Transistor 650V For Home Appliances

IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP�� 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP�� 5 Reverse Conducting IGBTs are optimized for full-rated hard ...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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