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.... The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors offer compliance with RoHS requirements and are Halogen Free.Product Attributes Brand: Leshan Radio Company, LTD. Material: PN...
LMBT4403LT1G General Purpose PNP Silicon Transistor The LMBT4403LT1G is a general-purpose PNP silicon transistor from LESHAN RADIO COMPANY, LTD., designed for a wide range of electronic applications. It offers ...
...PNP Silicon Transistors designed for various applications. These transistors offer reliable performance with specific electrical and thermal characteristics suitable for electronic circuits.Product Attribute...
... = 120 MHz typ.), and comes in a small flat package. It is complementary to the 2SC2881. Product Attributes Brand: TOSHIBA Type: Silicon PNP Epitaxial Transistor (PCT process) Package: PW-MINI (JEDEC: SC-62,...
...PNP silicon transistor designed for audio power amplifier, DC-DC converter, and voltage regulator applications. It offers a high current output up to 3A, low saturation voltage, and is a complement to the 2S...
...PNP Darlington transistor designed for general purpose amplifier and low speed switching applications. It offers a high Collector-Emitter Voltage (VCEO) of -150V and a Collector Dissipation (PC MAX) of 600mW...
...PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC = -1A) and high-speed switching time...
Digital Transistor (PNP) The DTA114Y series are PNP digital transistors with built-in bias resistors. This feature eliminates the need for external input resistors, simplifying circuit design and enabling inver...
...PNP digital transistors with built-in bias resistors, simplifying circuit design by eliminating the need for external input resistors. These transistors are ideal for inverter, interface, and driver applicat...
... characteristics such as collector current (IC), power dissipation (PD), and breakdown voltages (BVCBO, BVCEO). The product line includes standard transistors and Darlington configurations,...
... by eliminating the need for external input resistors, enabling the configuration of inverter circuits with straightforward on/off condition settings. Designed for ease of use, these transistors are ideal fo...
..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V ...
..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V C...
PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; S...
... PNP power transistor high power mosfet transistors Features ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base...
...Transistor (NPN) The SS8050W is an NPN bipolar junction transistor, complementary to the SS8550W. It is designed for general-purpose applications and is marked with 'Y1'. Product Attributes Brand: JTD (SHENZ...
...bipolar junction transistor designed for general-purpose applications. It offers a complimentary pairing with the S8550 transistor and is housed in the compact SOT-23 package, making it suitable for space-co...