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...Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and s...
... Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 625mW Frequency - Transition 250MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-......
... - NXP Semiconductors - PNP switching transistor. Detailed Description of PMST3906: EIS Part Number: EIS-PMST3906 Manufacturer Part Number: PMST3906 Manufacturer / Brand: NXP Semiconductors Brief Description...
... - NXP Semiconductors - PNP switching transistor. Detailed Description of PMST3906: EIS Part Number: EIS-PMST3906 Manufacturer Part Number: PMST3906 Manufacturer / Brand: NXP Semiconductors Brief Description...
NPN PNP Transistor Texas Instruments/TI ESDS312DBVR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Status Limited ......
NPN PNP Transistor Texas Instruments/TI ESDS312DBVR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Status Limited ......
...Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology....
... in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Featur...
BD244B, BD244C* (PNP) Complementary Silicon Plastic Power Transistors Features •Collector - Emitter Saturation Voltage - VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc •Collector Emitter Sustaining Voltage - ......
... Power Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of producing up to 125...
IRFM250 Power MOSFET POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM250 0.100 27.4A IRFM250 JANTX2N7225 JANTXV2N7225 REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLO...
... RF Power Transistor 300V 7A 60W TO-220 Package Product Listing: Product Name: AD630ARZ RF Power Transistor Product Description: This AD630ARZ RF Power Transistor is a high-performance, high-efficiency devic...
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor Hi...
...Transistors (Built-in Resistors) The DTA143ZUA is a digital transistor with built-in bias resistors, enabling the configuration of an inverter circuit without external input resistors. It is designed for sur...
... bias networks, simplifying circuit design, reducing board space, and lowering component count. The integrated BRT contains a single transistor with a series base resistor and a base-emitter resistor. Housed...
... (BRTs) are designed to replace discrete transistors and external bias resistors, simplifying circuit design, reducing board space, and lowering component count. The integrated network consists of a ......
...PNP Silicon Surface Mount Transistors with a Monolithic Bias Resistor Network (BRT). These devices are designed to replace a single transistor and its external resistor bias network, integrating a base resis...
Product Overview Digital Transistors (BRT) are PNP transistors with a monolithic bias resistor network, designed to replace discrete transistors and external resistors. They simplify circuit design, reduce boar...
RN2301 to RN2306 Bipolar Transistors The RN2301 to RN2306 series are silicon PNP epitaxial bipolar transistors featuring a built-in bias resistor (PCT Process). These transistors are designed for various applic...
... over the 0.5 to 2.7GHz frequency range with a maximum output power of 50W. The device offers an extremely wide instantaneous bandwidth, high efficiency, and excellent linearity performance. Features: • Powe...