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SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable fo...
Silicon NPN Power Transistors 2SD2499 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·......
AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable fo...
TO-92 Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE High voltage MARKING A42=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMA...
TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR (NPN) FEATURE General Purpose Switching Application MARKING 2N5551=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank...
TO-92 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURE Excellent hFE linearity Low noise Complementary to A733 MARKING C945=Device code Solid dot=Green molding compound device, if none,the no...
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base V...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
...Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A • Vgs(th...
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage...
... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • ......
2SD1047 Silicon NPN Power Transistors DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PIN DESCRIPTION 1 Base 2 Collector;connected to ...
MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120150 VOLTS, 50 WATTS Features DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc CollectorEmitter...
...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
Power Transistor IC LM317LZ Low Current Adjustable Voltage Regulator ■ OUTPUT VOLTAGE RANGE: 1.2 TO 37V ■ OUTPUT CURRENT IN EXCESS OF 100 mA ■ LINE REGULATION TYP. 0.01% ■ LOAD REGULATION TYP. 0.1% ■ THERMAL OV...