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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 m@ 4.5V 5.0 A < VGS = z RDS(on) < m@VGS = 2.5V 40 z z 20 40 z RDS(on) < 53 m@VGS = 1.8V APPLICATION z DC/DC Converters z Load...
...Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications Maximum ratings (Ta......
Product Overview Plastic-Encapsulate Transistors ideally suited for automatic insertion, designed for Switching and AF Amplifier Applications. Available in BC856W, BC857W, and BC858W variants.Product Attributes...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
Power MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs...
IRFP240, SiHFP240 Power MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free A...
IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements L...
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Col...
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Col...
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#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root ...
GENERAL PURPOSE APPLICATION. FEATURES High Current. (Max. : -1.5A) DC Current Gain : hFE=40Min. @IC=-0.15A Complementary to BD139. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Vol...
... 10-36V DC Housing size M4*20 Thread size / Output NPN/PNP NO/NC Temperature drift ≤±10% Hysteresis 1-20% Repeat accuracy ≤5% Load current ≤150mA Residual voltage ≤2.5V Consumption ......
... 10-36V DC Housing size M4*20 Thread size / Output NPN/PNP NO/NC Temperature drift ≤±10% Hysteresis 1-20% Repeat accuracy ≤5% Load current ≤150mA Residual voltage ≤2.5V Consumption ......
BCX54-10-QX andnbsp; 1. General description andnbsp;NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits andbull; High collector curre...
Nexperia PDTC144E Series NPN Resistor-Equipped Transistors Product Overview The Nexperia PDTC144E series comprises NPN resistor-equipped transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. Thes...
60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m (VGS = 10V) RDS(ON) < 19m (VGS = 4.5V) General Description The HXY4410 uses advanced trench technology to provide excelle...
60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m (VGS = 10V) RDS(ON) < 19m (VGS = 4.5V) General Description The HXY4410 uses advanced trench technology to provide excelle...