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.... Inductive proximity sensors are available in a wide variety of barrel diameters, lengths and configurations. Three-wire PNP normally open DC Working principle The switch contains high-frequency oscillation...
...PNP Proximity Switch Red LED Detect Sensor Working Status Description Inductive PNP Proximity Switches, also known as inductive proximity sensors, metal sensors. Three-wire PNP normally closed DC Working pri...
...PNP Proximity Switch Red LED Detect Sensor Working Status Description Inductive PNP Proximity Switches, also known as inductive proximity sensors, metal sensors. Three-wire PNP normally closed DC Working pri...
... circuit without connecting external input resistors 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Types: DTA114T series 5.ApplicationINVERT...
Mosfet Power Transistor IRFP90N20DPBF 200V 94A 23mOhm 180nCAC MOSFET Transistor Applications High frequency DC-DC converters Lead-Free Description The IR MOSFET family of power MOSFETs utilizes proven silic...
IRF3205PBF Silicon Npn Power Transistors 55V 110A 8.0m Power MOSFET Npn Power Transistor Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev...
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba -MOS ...
...2SB1424 Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/S...
... T100Q Bipolar Transistors - BJT ROHS 2SB1424 PNP Low VCE(sat) Transistor Product Paramenters Manufacturer: ROHM Semiconductor Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SM...
TIP3055 Silicon NPN Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Des...
TIP107 Darlington Power Transistors (PNP) complementary silicon power transistors Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: TO...
5A 16 Channel PLC Transistor Module 24V NPN / PNP Input Signal For Servo System Transistor amplifying plate is non-contact, DC 24V controlled by 5-24V, transistor amplifying plate is divided into large current ...
TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal device Z=......
TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR (PNP) FEATURE Power dissipation MARKING A733=Device code Solid dot=Green molding compound device, if none,the normal device Z=......
5A 16 Channel PLC Transistor Module 24V NPN / PNP Input Signal For Servo System Transistor amplifying plate is non-contact, DC 24V controlled by 5-24V, transistor amplifying plate is divided into large current ...
Product Detail Packaging Tray Part Status Active Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 30A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30...
Product Detail Manufacturer Sanken Packaging Bulk Part Status Active Transistor Type PNP/NPN - Darlington Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max)...
... amplifier ic chip Power Mosfet Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high current, high voltage, high side (PNP) switch with a built-in error detection circuit. The ...
... and reliability in a compact package. Designed for a wide range of applications, this transistor is well-suited for use in amplifiers, switches, and other electronic circuits. Its exceptional electrical cha...
...integrated circuits are a family of micropower low-dropout (LDO) voltage regulators. An order of magnitude reduction in dropout voltage and quiescent current over conventional LDO performance is achieved by ...