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... DC current gain characteristics, and is AEC-Q101 qualified. This transistor is compliant with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 Standard. Its NPN complement is BCX56-16-AU.......
... PNP small signal transistor in a SOT-363 surface mount package, ideally suited for automatic insertion. It features epoxy that meets UL-94 V-0 flammability rating and tin-plated leads solderable per J-STD-0...
Product Overview The S8550 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is complementary to the S8050 transistor. With a collector current...
... a low saturation voltage (VCE(sat) < -200mV @ -1A) and a low equivalent on-resistance (RCE(SAT) = 97m). The transistor is designed for applications requiring high current gain hold-up and is complementary t...
...(SAT), providing excellent performance consistency. Housed in a compact SOT26 (SC74R) package, it occupies half the footprint of two individual SOT23 transistors, making it ideal for space-constrained design...
.... These transistors are designed for switching and AF amplifier applications. They are totally lead-free, fully RoHS compliant, and halogen and antimony free, making them a "......
...FMMT591 is a PNP Silicon Epitaxial Planar Transistor designed for high saturation voltage and excellent HFE linearity. It is complementary to the FMMT491 and features a low equivalent on-resistance with RSAT...
... The MMBT5401 is a PNP general-purpose transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT5551, i...
Product Overview The SS8550 is a PNP bipolar junction transistor designed for general-purpose applications. It features high collector current capability and serves as a complementary component to the SS8050 tr...
...PNP silicon transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to reduced heat generation and se...
...PNP silicon transistor in a SOT23 plastic package, offering low collector-emitter saturation voltage and high current capability. It provides improved device reliability due to reduced heat generation and se...
... BC856/BC857/BC858 series are PNP silicon general-purpose transistors designed for amplifier applications. They are housed in the SOT-323/SC-70 package, suitable for low-power surface-mount applications. The...
Product Overview The LBC857CLT1G Series from LESHAN RADIO COMPANY, LTD. comprises PNP silicon general-purpose transistors designed for a wide range of applications. These transistors offer excellent ESD protect...
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/ SC70 which is designed for low power ...
... is a PNP middle power transistor designed for driver applications. It features a low VCE(sat) of -400mV (Max.) at IC/IB=-500mA/-25mA, making it suitable for low frequency amplification and high-speed switch...
... electronic applications requiring a versatile transistor with specific electrical characteristics. Its SOT-523 plastic surface-mounted package makes it ideal for compact designs. Product Attributes ......
...a general-purpose PNP epitaxial planar transistor designed for medium power amplification and switching applications. It features a complementary NPN type (MMBT4401) and is also available in a lead-free vers...
Product Overview The MMBT5401 is a PNP high-voltage transistor designed for general-purpose applications. It offers robust performance with specified breakdown voltages and current gain characteristics. This tr...
...TOSHIBA 2SA1941 is a Silicon PNP Triple Diffused Type transistor designed for Power Amplifier Applications. It features a high breakdown voltage of VCEO = -140 V (min) and is complementary to the 2SC5198. Th...
...2SB1260 is an epitaxial planar type PNP silicon transistor designed for high breakdown voltage and high current applications. It offers good hFE linearity and low VCE(SAT), making it suitable for various pow...