Total 10001 products for power cable specification Manufacture & Suppliers

• RF Power Transistors MHW5182 - Motorola, Inc - 450 MHz CATV Amplifier

  

  ... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain  @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • ......

  Mega Source Elec.Limited

  China

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• CM600DY-12NF - Mitsubishi Electric Semiconductor - HIGH POWER SWITCHING USE

  

  ... Mitsubishi Electric Semiconductor - HIGH POWER SWITCHING USE Description: Ic 600A Vces 600V Insulated Type 2-lements in a pack Applications: General purpose inverters and servo controls etc. Specifications:...

  Mega Source Elec.Limited

  China

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• IGBT Power Module 6MBI25S-120-02 - Fuji Electric - IGBT(1200V/25A)

  

  ...drive amplifier · Uninterruptible power supply · Industrial machines, such as welding machines Applications: · Compact package · P.C.board mount · Low VCE(sat) Specifications: part no. 6MBI25S-120 Manufactur...

  Mega Source Elec.Limited

  China

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• IGBT Power Module EXA40-48S05- ARTESYN - DC-DC CONVERTERS

  

  ...CONVERTERS Description: The EXA40 Series, comprising 8 different models is targeted specifically at the telecommunications, industrial electronics, mobile Telecommunications and distributed power markets. Th...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MBM50F12 - TOSHIBA - Silicon N-channel IGBT

  

  ...power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode. * High reliability, high durability module. * High thermal fatigue durability (Al-SiC base plate.) (delta Tc=70...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MCC162-14I01 - IXYS- Thyristor Modules Thyristor/Diode Modules

  

  ... plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MCD25-08I08 - IXYS - Thyristor Modules Thyristor/Diode Modules

  

  ... plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered, E 72873 • Keyed gate/cathode twin pins Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MCD132-08I01 - IXYS - Thyristor Modules Thyristor/Diode Modules

  

  ... plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MCD200-16I01 - IXYS - Thyristor Modules Thyristor/Diode Modules

  

  ... plate ● Planar passivated chips ● Isolation voltage 3600 V~ ● UL registered, E 72873 ● Keyed gate/cathode twin pins Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG8N6ES1 - TOSHIBA - MITSUBISHI IGBT Module

  

  ...IGBT Module Description: High power switching applications Motor control applications Applications: • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal (TH) Specifications: ...

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  China

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• IGBT Power Module MG8N6ES42 - TOSHIBA - MITSUBISHI IGBT Module

  

  ...IGBT Module Description: High power switching applications Motor control applications Applications: • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal (TH) Specifications: ...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15D4HM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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• IGBT Power Module MG15D6EM1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

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• IGBT Power Module MG15G1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

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• IGBT Power Module MG15G1AL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

  

  ...) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part...

  Mega Source Elec.Limited

  China

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