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IRF9640STRLPBF MOSFET High Power High Performance Power Electronics Solution This IRF9640STRLPBF MOSFET Transistor is a high-voltage, high-speed, low-on-resistance, N-channel MOSFET designed for use in switchin...
...Power Electronics for Automotive and Industrial Applications Description: The IRFR6215TRPBF is an N-channel power MOSFET with a fast switching speed, low on-resistance and low gate charge. It is specifically...
... MOSFET Power Electronics High Performance Switching and Controlling Solution Product Description: The IRFU9024NPBF is a N-channel enhancement mode power metal-oxide-semiconductor field-effect transistor (MO...
IRF9Z34NSTRLPBF MOSFET Power Electronics High Performance Reliable Power Control Product Features: - N-Channel Enhancement Mode - Ultra Low On-Resistance - High Input Impedance - Low Gate Threshold ......
SI2301CDS-T1-GE3 MOSFET Power Electronics High Performance and Durable Solution for Power Applications Vishay SI2301CDS-T1-GE3 N-Channel MOSFET, 30V, 3.2A, 3.2 Ohm, 8-Pin SOT-23 Product Features: - ......
... other high-power applications. Its features include high blocking voltage with low on-resistance, low gate charge, fast switching, and temperature and avalanche ......
... voltage of 30V, a gate-source voltage of ±20V, a drain current of 61A, a drain-source on-state resistance of 0.312mΩ, and a maximum power dissipation of 85W. This MOSFET is ideal for high temperature and hi...
IRLML2803TRPBF MOSFET Power Electronics High Performance Low On-Resistance Enhanced Power Handling Product Overview: The IRLML2803TRPBF is a high-speed, logic level, N-channel MOSFET with a low RDS(on). This de...
IRF100B201 MOSFETs High Power High Efficiency Reliable Power Electronics Solutions IRF100B201 MOSFET Description: The IRF100B201 is a high-voltage, high-current MOSFET that has a drain-source breakdown voltage ...
...: -60V • Drain Current: -24A • Gate-Source Voltage: ±20V • On-Resistance: 0.045Ω • RDS(on): 0.045Ω • Input Capacitance: 488pF • Power Dissipation: 3W •...
... Voltage: ±20V - Continuous Drain Current: 15A - Drain-Source On-State Resistance: 0.06 Ohm - Gate Charge: 47nC - Power Dissipation:...
...Power Electronics High Performance Reliability for Your Applications This IRFP460APBF MOSFET is a high-performance, low-cost, power MOSFET. It features a low-threshold voltage and a high-current capability. ...
...Power Electronics High Voltage High Current Low On Resistance The IRFH6200TRPBF from Infineon is a single N-channel HEXFET® power MOSFET in a TO-220AB package. It is a high-side MOSFET featuring low gate cha...
... and a maximum drain current of 8A. It is designed for use in a variety of applications such as switching, power management, low-side switching, and logic level translation. Features: • Maximum drain-source ...
...-Gate Voltage (Vdg): 30V - Gate-Source Voltage (Vgs): ±20V - Drain Current (Id): 8A (Tc=25℃) - Power Dissipation (Pd):...
AO6601 30V N-Channel MOSFET Power Electronics Features: - 30V N-Channel MOSFET for improved power efficiency and high current switching - Low on-resistance for low power loss - Low gate charge for improved swit...
...Power Electronics Features: - Low RDS(on) for high efficiency - Low gate charge for high switching performance - High current capability and low thermal resistance for high power handling - 100% avalanche te...
NTR5103NT1G MOSFET Power Electronics TO-236-3 Device for High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25C 260...
NTR4003NT3G MOSFET Power Electronics TO-236-3 Device High Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous ......
NTR5105PT1G MOSFET Power Electronics TO-236-3 Device High Efficiency Power Conversion FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25...