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...Power Electronics Single N-Channel SO-8 FL 30 V 46 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, V...
IRFU210PBF MOSFET Power Electronics High Performance Low Cost Switching Solution Description: The IRFU210PBF is a high-performance N-Channel MOSFET designed for use in power applications. It features a low gate...
... @ 100µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V Power - Max 21W Operating Temperature -55°C...
IRF9630PBF MOSFET Power Electronics High Performance Reliable Switching Product Description: The IRF9630PBF is a N-Channel Power MOSFET designed for high-side switching applications. It is designed to withstand...
...Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It featur...
IPA60R360P7SXKSA1 MOSFET Power Electronics High Voltage High Curren Fast Switching Description: The IPA60R360P7SXKSA1 N-Channel MOSFET from Infineon is a robust and reliable power MOSFET that offers a maximum d...
...) @ Id 2.4V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V FET Feature - Power Dissipation (Max) 420mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)...
... 2.5V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)...
...-T1-GE3 MOSFET Product Description: The Si2307CDS-T1-GE3 MOSFET is a high-performance power MOSFET designed for use in a variety of power electronics applications. It features low on-resistance, fast switchi...
... Voltage: 100V • Continuous Drain Current: 34A • On-State Resistance: 0.0046 Ohm • Gate-Source Voltage: ±20V • Maximum Power Dissipation: 55W • Maximum Drain-Source Avalanche Voltage: 30V •...
...power electronics device. This device is designed to provide high levels of efficiency and performance, making it ideal for a variety of applications. Features of the IRLMS6802TRPBF include: • Maximum Drain ...
IRF9520NPBF MOSFET Power Electronics Product Features: • N-Channel Enhancement Mode • Avalanche-Rated • Logic Level Gate Drive • Low Gate Charge • Low On-......
Product Listing: Name: IRFP7537PBF MOSFET Power Electronics Type: N-Channel Enhancement Mode Package: TO-247 Max Drain Source Voltage: 100V Max Drain Source Resistance: 0.......
... that require efficient, reliable, and high-power switching. Product Specifications: • Maximum Drain-Source Voltage: 100V • Maximum Gate-Source Voltage: 20V • Continuous Drain ......
IRFS7730TRL7PP MOSFET Power Electronics The IRFS7730TRL7PP is a high-performance power MOSFET from International Rectifier. Featuring an advanced high cell density process, this device delivers low on-resistanc...
... V • On-Resistance Rds(on): 0.14 Ohm • Input Capacitance (Ciss) @ Vds: 236 pF @ 10V • Operating Temperature: -55°C ~ 175°C • Power Dissipation: 4.8W •...
...Power Electronics Product Listing: • Type: NVR5124PLT1G • Package: TO-220 • Configuration: Single • Technology: MOSFET • Drain-Source Voltage (Vdss): 500V • Gate-Source Voltage (Vgs): ±20V • Drain Current (I...
... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25°C:...
...-source on-resistance of 0.024Ω and a maximum drain current of 41A. It is also capable of sustaining a maximum avalanche energy of 37mJ. This MOSFET is suitable for power switching applications. Why buy from...
...Power Electronics N-Channel 500 V D²PAK TO-263 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On...