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Gate Drivers TSMC 12V FET DRVR Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: Gate Drivers RoHS: Details Product: MOSFET Gate Drivers Type: High-Side, Low-Side Mountin...
Gate Drivers 600V half-brdg,2.8A BSD, OCP, EN & FAULT Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Ty...
Gate Drivers EV Inverter Control; IGBT & SiC GDIC Product Attribute Attribute Value Select Attribute Manufacturer: Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Half-Brid...
... technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a...
...IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs are compatible with standar...
...POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better chara...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...
... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is ...
...12 Gate Drivers Product Description: The CSD95372BQ5M NexFET™ smart power stage is a highly optimized design for use in a high-power, high-density Synchronous Buck converter. This product integrates the Driv...
..., and GaN FETs (UCC5350SBD). The UCC53x0S provides a split output that controls the rise and fall times individually. The UCC53x0M connects the gate of the transistor to an internal clamp to prevent false tu...
Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dr...
... gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Get more details please cl...
...Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Co...
...-H Chipscomponent Electronic Components IC Chips LV8729V-TLM-H High Power MOSFET electronic chip brand new original SSOPK-44 MOTOR/motion/ignition controller and DRIVER STEPPING MOTOR DRIVER Category Integra...
...Power MOSFET The IPC 100N04S5L1R9ATMA1 is an N-channel power MOSFET designed to provide high current, low on-state resistance, and low gate charge. This device is optimized for use in automotive power manage...
...POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged ...
...Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impe...