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Product Overview The UMC5N is a Dual Digital Transistor (NPN+PNP) that integrates both DTA143X and DTC144E chips within a SOT-353 package. It is ideal for power switch circuits, offering reduced mounting cost a...
...(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This...
Quick Detail: FAST RECOVERY RECTIFIER DIODES Description: Dual high voltage rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP,they are intended...
Quick Detail: High Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: International standard package mini BLOC (ISOTOP) compatible Aluminium-nitride isolation - high...
Product Overview The INCHANGE Semiconductor 2SA1837 is a Silicon PNP Power Transistor designed for power amplifier and driver stage amplifier applications. It features a high current-gain bandwidth product and ...
...-emitter saturation voltage, making them suitable for medium power general purposes and driver stages of audio amplifiers. Complementary types include BCX54, BCX55, and BCX56. Product Attributes Packaging: ....
Product Overview The TOSHIBA 2SA1298 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for low frequency power amplifier and power switching applications. Key advantages i...
PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; S...
N-channel 800 V, 0.19 typ., 19.5 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Applications Switching applications Description These very high voltage N-channel Power MOSFETs are...
General Purpose Power Mosfet Transistor KSP2907A Equivalent PNP Amplifier Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means a Center Collector (...
...Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current ...
... (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V Power - Max 400mW Frequency - Transition 80MHz Operating Temperature -55°C ~ 125°C (TJ) Mounting Type Through Hole Package / Case TO-......
... (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 6V Power - Max 400mW Frequency - Transition 80MHz Operating Temperature -55°C ~ 125°C (TJ) Mounting Type Through Hole Package / Case TO-......
...PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It serves as a complementary device to the S9014 transistor and is housed in a compact SOT-23 pack...
...Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devi...
...Transistors (NPN+PNP) The UMD6N is a digital transistor package integrating DTA143T (PNP) and DTC143T (NPN) transistor elements. These independent transistor elements eliminate interference, offering a signi...
Product Overview The BCX51/BCX52/BCX53 series are PNP bipolar transistors designed for medium power general purpose applications. They offer high current and low voltage capabilities, making them suitable for d...