| Sign In | Join Free | My burrillandco.com |
|
...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ......
...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor ...
NTGS4141NT1G MOSFET Power Electronics Transistor Power Single N-Channel TSOP-6 30 V 7.0 A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @...
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - ......
1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to...
... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin p...
Get powerful performance with STD12N10L MOSFET Transistors Pros and Cons of using STD12N10L MOSFET Transistors As a seeker of powerful performance from your electronic devices, you’ve likely come across the STD...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs m...
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) Trench IGBT Technology Low Switching Losses ...
Product Overview NPN Silicon Planar Medium Power Darlington Transistors designed for general purpose amplification and switching applications. These transistors offer high voltage capabilities, significant curr...
...2SC4097 is a medium power NPN transistor designed for driving circuits and low-frequency amplifiers. It features a high maximum collector current (ICMax = 0.5A) and low VCE(sat) for optimal low-voltage opera...
... The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series are Complementary Silicon Power Darlington Transistors, manufactured using the epitaxial base process. These transistors are designed for general-purpose a...
IRFS3306TRLPBF MOSFET Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is a N-Channel enhancement mode, high-speed, power MOSFET devi...
...Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Ma...
WiMAX power LDMOS transistor BLF6G27S-45K NXP New and Original Part No BLF6G27S-45K Manufacturer NXP Package Standard Packaging Description New and Original Shipping: 1, We can shipping all over the world by ...
Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V Power MOSFET IXFQ60N50P3 I D25 = 60A IXFH60N50P3 RDS(on) ≤ 100mΩ N-Channel Enhancement Mode Ava...
1. General description The 74AHC595; 74AHCT595 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. The 74...
...qualified for industrial level BENEFITS • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION HFA08TB6...