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... has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, ...
POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) APT94N65B2C3G POWER MOS...
Integrated Circuit Chip STL24N60M6 Power MOSFET Transistors 600V 8PowerVDFN Product Description Of STL24N60M6 STL24N60M6 is Single FETs Power MOSFET Transistors, Low gate input resistance, the Operating Tempera...
... Transistor 2. Part Number: IRLR2905TRPBF 3. Package Type: TO-220 4. Configuration: Single 5. Voltage: 100V 6. Current: 8A 7. Power Dissipation: 20W 8. Operating Temperature Range: -55°C to +150°C 9. Mountin...
SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip Product Description Of IMW65R027M1H IMW65R027M1H is 650V CoolSiC M1 SiC Trench Power Device, N-Channel Single FETs MOSFETs Tra...
Integrated Circuit Chip IPT020N10N5ATMA1 100V Power MOSFET Transistor 8-PowerSFN Product Description Of IPT020N10N5ATMA1 IPT020N10N5ATMA1 is OptiMOS 5 100V industrial power MOSFET Transistors in TO-Leadless i...
2N-Channel NTMFD5C470NLT1G Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specifi...
... carbide Power MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads package. Specification Of SCTWA35N65G2V Part N...
N-Channel NTH4L040N120SC1 Silicon Carbide Power MOSFET Transistors TO-247-4L Product Description Of NTH4L040N120SC1 NTH4L040N120SC1 is 1200V 58A(Tc) 319W (Tc) N-Channel Silicon Carbide Power MOSFET Transistors...
... carbide Power MOSFET Transistors Product Description Of SCTW90N65G2V SCTW90N65G2V is Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an TO-247-3 package. Specification Of SCTW90N65G2V Part Number SCTW90...
GSM High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of h...
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switchin...
...Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon...
... Max output power(dBm) 37dBm±1dBm (No ALC control) Passband group delay(ns) ≤50ns Gain(dB) 44dB±1dB Passband ......
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...Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverter...
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 15A. High Power Dissipation : 15...
CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low ......
AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable f...