| Sign In | Join Free | My burrillandco.com |
|
TO-247-4 MSC025SMA120 Silicon Carbide N-Channel Power MOSFET Transistors Product Description Of MSC025SMA120 MSC025SMA120 device is a 1200 V, 25 m SiC MOSFET in a TO-247 4-lead package with a source sense. Spe...
Integrated Circuit Chip MSC025SMA120J N-Channel Power MOSFET Transistors Product Description Of MSC025SMA120J MSC025SMA120J combine a formidable array of technologies into a single package, optimized for reliab...
High Efficiency N-Channel Power MOSFET Transistors MSC040SMA120B4 TO-247-4 Product Description Of MSC040SMA120B4 MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package with a source ......
Power MOSFET Transistors BSZ050N03LSGATMA1 8-PowerTDFN Integrated Circuit Chip Product Description Of BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Extremely low gate and output charges, combined with very low on-resist...
IC Chip SCTL35N65G2V 650V 40A Silicon carbide Power MOSFET Transistors Product Description Of SCTL35N65G2V SCTL35N65G2V device reduces internal capacitances and gate charges for faster and more efficient switch...
Automotive IGBT Modules FB50R07W2E3C36 Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
Automotive IGBT Modules F3L200R07W2S5B11 Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100...
Automotive IGBT Modules FB50R07W2E3B23 Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
Automotive IGBT Modules F3L200R07W2S5FPB56 Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 1...
Automotive IGBT Modules F3L11MR12W2M1HPB19 MOSFET Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guarant...
Automotive IGBT Modules FP100R12KT4PB11 Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100%...
Automotive IGBT Modules FS150R12N3T4B80 Low Power IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100%...
Automotive IGBT Modules F475R07W2H3B11 Low Power IGBT Transistors Modules [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100%...
Pixel Rgb Rgbw Light Emitting Price 3 Pin Low Power Consumption Led Diode Part number ILED diode DC New year Datasheet Please contact me Package type Surface mount Application PCBA Whatsapp 86- 15102073750 Ship...
Pixel Rgb Rgbw Light Emitting Price 3 Pin Low Power Consumption Led Diode Part number ILED diode DC New year Datasheet Please contact me Package type Surface mount Application PCBA Whatsapp 86- 15102073750 Ship...
...Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been...
IRLB4030PBF HEXFET general Power Mosfet Transistor 130 A Continuous Drain Current Applications ►DC Motor Drive ►High Efficiency Synchronous Rectification in SMPS ►Uninterruptible Power Supply ►High Speed Power ...
2SK1582(G15) Power Mosfet Transistor Electronics Components Chip IC Electronics Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features Can be drive...
2inch 4inch 6inch 8inch 3C-N SiC Wafer Silicon Carbide Optoelectronic High-Power RF LEDS Description of 3C-N SiC Wafer: Compared to 4H-Sic, although the bandgap of 3C silicon carbide (3C SiC) is lower, its ......
... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...