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Product Overview The FCX690B is a high-gain NPN power transistor designed for various applications requiring robust performance. It features a high continuous collector current of 2A and a peak pulse current of...
Product Overview The FCX493 is a 100V NPN medium power transistor in a SOT89 package. It offers a high continuous current of 1A, low saturation voltage, and is designed for applications such as load management,...
Product Overview The FZT853 is a 100V NPN medium power transistor designed for high performance and reliability. It features a high continuous collector current of 6A, a peak pulse current of 10A, and low satur...
Product Overview The MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, h...
Product Overview The TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain...
Product Overview The LBTP180Z4TZHG and S-LBTP180Z4TZHG are PNP medium power transistors designed for various applications. They feature high current and low voltage capabilities. The S-prefix variants are AEC-Q...
Product Overview The LBTP880DPTUG and S-LBTP880DPTUG are PNP Power transistors designed for surface mount applications. They feature lead forming for plastic sleeves and are compliant with RoHS requirements and...
Product Overview The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, w...
Product Overview The MJD122D is a Silicon NPN Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
Product Overview The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, dis...
... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage ......
... SILICON POWER TRANSISTORS ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are inten...
... (VCE(sat)) of 1.1V (Max) at IC = 4A. It is a complement to the 2N2955 type.Product Attributes Brand: JSMICRO Semiconductor Model: 2N3055 Material: Silicon NPN Origin:...
Quick Detail: MRF134 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FET Description: .designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150...
Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range, in either sin...
...Power Amplifier With SK Power Transistors (MP-480S) Product Description: NOVA is a professional loudspeaker manufacture and exporter in China. We make line array speaker, line array, pro audio, pro audio spe...
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < @V = 4.5V 25m GS z RDS(on) < @V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATU...
HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applic...
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < @V = 4.5V 25m GS z RDS(on) < @V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATU...