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...power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 ...
PRODUCT DESCRIPTION 8542.39.0001 Triode NPN PNP Transistor Circuit Protection TPD2S300YFFR NPN PNP Transistor Texas Instruments/TI TPD2S300YFFR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Stat...
..., 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: ...
...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
...Transistors 2SD965A 2SD965A FEATURE Audio amplifier Flash unit of camera Switching circuit Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
...Overview The WPT2N41 is a single, PNP bipolar power transistor from Will Semiconductor Ltd. featuring a very low saturation voltage. It is designed for applications such as charging circuits and power manage...
Product Overview The TIP32 series are NPN power transistors designed for medium power linear and switching applications. They serve as complements to the TIP31 series, offering robust performance with a TO-220 ...
SHWE5173 is a 0.3mm Contact Pitch, 1mm above the board, Flexible Printed Circuit ZIF Connector. Part NO: MHPM7A30A60B Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Meg...
PKM4319PI is a EMIFIL (Capacitor type) Single Circuit Type for Signal Lines. Part NO: PKM4319PI Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview Mega Source...
PKM4318PI is a EMIFIL (Capacitor type) Single Circuit Type for Signal Lines. Part NO: PKM4318PI Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview Mega Source...
...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...
...Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works f...
...Power Transistors Features & Benefits: • High Gain: 18.0 dB typ. at 900 MHz • High Efficiency: 33.0% typ. at 900 MHz • Low Thermal Resistance: 0.20°C/W typ. • Low Reverse Transfer Capacitance: 7.0 pF typ. • ...
BGT24LTR11N16E6327XTSA1 RF Power Transistors Silicon Germanium 24GHz RadarTransceiver MMIC Frequency 24GHz ~ 24.25GHz Power - Output 6dBm Serial Interfaces - Voltage - Supply 3.3V Current - Receiving 45mA Curre...
... RF Power Transistor Single-Chip Bluetooth Transceiver and Baseband Processor Package 49-VFBGA Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 +EDR Modulation 4DQPSK, 8DPSK, GFSK Frequen...
BGT60TR13CE6327XUMA1 RF Power Transistor 60 GHz Radar Sensor Package 119-WFBGA Type TxRx Only RF Family/Standard Cellular Protocol LTE Modulation GFSK Frequency 57GHz ~ 64GHz Data Rate (Max) 100Mbps Power - Out...
... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to ......
...Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state tran...
...Motorola, Inc - MICROWAVE POWER TRANSISTORS Description: Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performanc...
...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...