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PTB20193 is a 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor . Part NO: PTB20193 Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview Mega Source Elec...
PTB20195 is a 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor . Part NO: PTB20195 Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview Mega Source Ele...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Packa...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Packa...
SAK-XC2365A-104F80LR AB New original Electronic Components IC chip integrated circuit BOM One-stop Purchase Spot Goods Product Description There are several microcontroller families that are commonly used in in...
High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging Tube Part Stat...
FGH20N60SFD IGBT Power Transistors 600V 20A Field Stop 165W Through Hole Description Using Novel Field Stop IGBT Technology, ON Semiconductors new series of Field Stop IGBTs offer the optimum performance for A...
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of ......
High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging Tube Part Stat...
...BU508AF is a Silicon NPN Power Transistor designed for high-voltage applications. It features a high collector-emitter sustaining voltage of 700V (Min) and high switching speed, making it suitable for horizo...
Product Overview The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
...–Signal Characterization • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Space Saving Package For Push–Pull Circuit Applications — MRF136Y •...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =...
...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURES ● VDS =100V,ID =...
...Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver L...
Mosfet power transistor PXT8050 transistor (NPN) SOT-89-3L SMD Model number PXT8050 D/ C Newest Brand Original Package type Surface Mount ......
Mosfet power transistor PXT8050 transistor (NPN) SOT-89-3L SMD Model number PXT8050 D/ C Newest Brand Original Package type Surface Mount ......
...Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver L...