| Sign In | Join Free | My burrillandco.com |
|
...Overview The JSMICRO TIP2955 is a silicon PNP power transistor designed for general-purpose switching and amplifier applications. It features a TO-247 package and is a complement to the TIP3055. This transis...
Product Overview The 2SD1782K is a power transistor designed for driver applications. It features a low VCE(sat) of 0.2V (Typ.) and a high breakdown voltage of BVCEO=80V. This transistor complements the 2SB1198...
...switching NPN power transistor designed for various applications. It features a low saturation voltage, enabling efficient operation. Pb-free packages are available, contributing to environmental considerati...
...). With a low saturation voltage of VCE(sat) < -65mV @ IC = -1A and specified hFE up to -10A for high current gain hold-up, this transistor offers excellent efficiency and performance. It is a complementary ...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
...Power Transistor High Voltage High Current Switching Device Parameters: • Drain-Source Voltage (Vdss): 100V • Current - Continuous Drain (Id) @ 25°C: 66A • Rds On (Max) @ Id, Vgs: 10 mOhm @ 10V, 33A • Vgs(th...
IRFR3410TRPBF MOSFET Power Transistor High-Performance Low On-Resistance for Maximum Efficiency Product Parameters: Drain-Source Voltage: 60V Gate-Source Voltage: 20V Continuous Drain Current: -14A Pow...
IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista...
BSZ100N06LS3G Mosfet Power Transistor MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 Features Ideal for high frequency switching and sync. rec. Optimized technology for ......
... and an all gold metallization system. Applications: • Specified for 53– and 60–Channel Performance • Broadband Power Gain @ f = 40 – 450 MHz Gp= 18.2 dB (Typ) @ 50 MHz 19.0 dB (Typ) @ 450 MHz • ......
NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 ...
Silicon PNP Power Transistors 2SB861 DESCRIPTION ·With TO-220C package ·Complement to type 2SD1138 APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitt...
2SD1047 Silicon NPN Power Transistors DESCRIPTION ·Complement to type 2SB817 ·With TO-3PN package APPLICATIONS ·Power amplification ·Low frequency and audio band PIN DESCRIPTION 1 Base 2 Collector;connected to ...
MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120150 VOLTS, 50 WATTS Features DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc CollectorEmitter...
BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■...
... Medium Power Transistors designed for general purpose applications.Product Attributes Brand: Onsemi (implied by T1G suffix, common for Onsemi)Technical Specifications Model Type Collector Current (Max) Coll...
...Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown voltage of 60V and a minimum DC current gain (hFE) of 750 ...
Product Overview The 2SD1415A is a Silicon NPN Darlington Power Transistor from ISC. It is designed for high power switching applications, including hammer driver and pulse motor driver applications. Key featur...
Product Overview The MJL21194 is a Minos Silicon NPN triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V...