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...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...
...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...
...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout a...
...Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base...
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losse...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
...Power Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power s...
...Power Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power s...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
...Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate volta...
...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available ...
...Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It ca...