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Power Transistor Datasheet

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Total 15062 products for power transistor datasheet Manufacture & Suppliers

Durable ROHM 2SAR542PT100 PNP Middle Power Transistor for in Motor Control and Power Supply Circuits

...Power Transistor The 2SAR542P is a PNP Middle Power Transistor designed for driver applications. It offers a low VCE(sat) of -0.4V Max. (IC/IB= -2A/ -100mA) and is complementary to the NPN type 2SCR542P. Thi...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors

...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good q...

Guangzhou Nova Acoustics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wi...

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu,China

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Innotion 20W 6000MHz High Efficiency GaN HEMT RF Power Transistor Amplifier IC

...Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide...

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu,China

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RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

....on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General

... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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SPW24N60C3 MOSFET Power Transistor High Power High Efficiency Low On Resistance

...Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(O...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RF Power Transistors - REF03GSZ-REEL7 - High Performance And Reliability

...Power Transistor - REF03GSZ-REEL7 Product Description: The REF03GSZ-REEL7 is a high-power, high-efficiency RF power transistor designed for use in wireless communication applications. This device provides ex...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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AO3400 SOT-23 Mosfet Power Transistor NPN MOSFET A09T N Channel Transistor

AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T ......

Shenzhen Canyi Technology Co., Ltd.
Guangdong

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FGH40N60SFD IGBT Power Transistor 600V 40A Field Stop Transistor TO-247-3 290W

FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor��s new series of Field Stop IGBTs offer the optimum performance for ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU

FGH60N60SFDTU Insulated Gate Bipolar Transistor 600V 60A 378W IGBT Transistors Applications �� Solar Inverter, UPS, Welder, PFC Specifications Product Attribute Attribute Value Product Category: IGBT Transistors...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium��power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing comple...

Anterwell Technology Ltd.
Guangdong,China

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MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS

... 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, powe...

Wisdtech Technology Co.,Limited
Guangdong,China

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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate ......

Anterwell Technology Ltd.
Guangdong,China

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6DI30A 120 Power Switching Transistor Si NPN Power Transistor 6 Channel

...Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A ...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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