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Product Overview The Minos Silicon MJL21193 is a PNP epitaxial power transistor designed for high-fidelity audio frequency amplifier output stages. It offers a high collector voltage of -250V (min) and is compl...
Product Overview The MJD32CQ is a PNP Power Transistor designed for general purpose amplifier and low speed switching applications. It features UL-94 V-0 flammability rating, halogen-free construction, and Mois...
Product Overview The MJD31CQ is an NPN Power Transistor designed for general purpose amplifier and low speed switching applications. It features an epoxy casing that meets UL-94 V-0 flammability ......
Product Overview The FCX690B is a high-gain NPN power transistor designed for various applications requiring robust performance. It features a high continuous collector current of 2A and a peak pulse current of...
Product Overview The FCX493 is a 100V NPN medium power transistor in a SOT89 package. It offers a high continuous current of 1A, low saturation voltage, and is designed for applications such as load management,...
Product Overview The FZT853 is a 100V NPN medium power transistor designed for high performance and reliability. It features a high continuous collector current of 6A, a peak pulse current of 10A, and low satur...
Product Overview The MJD127T4G is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, h...
Product Overview The TIP125/126/127 are Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. They feature a TO-220C package, high DC current gain...
Product Overview The LBTP180Z4TZHG and S-LBTP180Z4TZHG are PNP medium power transistors designed for various applications. They feature high current and low voltage capabilities. The S-prefix variants are AEC-Q...
Product Overview The LBTP880DPTUG and S-LBTP880DPTUG are PNP Power transistors designed for surface mount applications. They feature lead forming for plastic sleeves and are compliant with RoHS requirements and...
Product Overview The LBTP180Y3T1G and S-LBTP180Y3T1G are PNP medium power transistors designed for general purposes and driver stages of audio amplifiers. They offer high current and low voltage capabilities, w...
Product Overview The MJD122D is a Silicon NPN Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
Product Overview The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, hig...
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, dis...
... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage ......
... SILICON POWER TRANSISTORS ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are inten...
Quick Detail: MRF134 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FET Description: .designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150...
Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range, in either sin...
...Power Amplifier With SK Power Transistors (MP-480S) Product Description: NOVA is a professional loudspeaker manufacture and exporter in China. We make line array speaker, line array, pro audio, pro audio spe...
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < @V = 4.5V 25m GS z RDS(on) < @V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATU...