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Product Listing: SI4421-A1-FTR Parameters: Type: RF Power Transistor Technology: GaN Package Type: SMD Operating Voltage: 40V Operating Frequency: 0.5 - 3 GHz Output Power: 50W Power Gain: > 12.5 ...
SI1000-E-GM2R RF Power Transistor Features: 500-1000 MHz Operating Frequency Range 28V Operating Voltage 10W Output Power 6 dB Gain High Efficiency Low Noise Low Distortion High Linearity Applic...
HMC8038LP4CETR RF Power Transistor Specifications: Frequency Range: DC - 6GHz Maximum Power Output: 28dBm Gain: 15.5dB Supply Voltage: 3.5V Operating Temperature: -55C to +150C P1dB Output Power: ...
Product Listing: ADL5602ARKZ-R7 RF Power Transistor Features: High Output Power: >35 dBm High Efficiency: >50% Wide Bandwidth: 5.5 to 6.5 GHz Low Cost Low-Noise Low-Intermod Performance RoHS Compl...
HMC544AE RF Power Transistor Features: - High Output Power: 28 dBm Typical - High Gain: 14 dB Typical - Low Noise Figure: 2 dB Typical - Excellent Linearity - Wide Bandwidth: 600 MHz - RoHS Compliant Package: S...
...: Product: AD8342ACPZ-REEL7 RF Power Transistors Package: Reel Configuration: Single Operating Frequency Range: DC - 6GHz Gain: 17 dB Noise Figure: 1.7 dB Power Supply: +5.0V Supply Current: 5.0mA Supply Vol...
HMC915LP4ETR RF Power Transistor - High Performance High Efficiency Product Specifications: - Frequency Range: 9-10GHz - Power Gain: 13 dB - Output Power: 23 dBm - Supply Voltage: +5V - Current Consumption: 1.2...
...power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 ...
..., 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: ...
...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...
...Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works f...
...Power Transistors Features & Benefits: • High Gain: 18.0 dB typ. at 900 MHz • High Efficiency: 33.0% typ. at 900 MHz • Low Thermal Resistance: 0.20°C/W typ. • Low Reverse Transfer Capacitance: 7.0 pF typ. • ...
BGT24LTR11N16E6327XTSA1 RF Power Transistors Silicon Germanium 24GHz RadarTransceiver MMIC Frequency 24GHz ~ 24.25GHz Power - Output 6dBm Serial Interfaces - Voltage - Supply 3.3V Current - Receiving 45mA Curre...
... RF Power Transistor Single-Chip Bluetooth Transceiver and Baseband Processor Package 49-VFBGA Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 +EDR Modulation 4DQPSK, 8DPSK, GFSK Frequen...
BGT60TR13CE6327XUMA1 RF Power Transistor 60 GHz Radar Sensor Package 119-WFBGA Type TxRx Only RF Family/Standard Cellular Protocol LTE Modulation GFSK Frequency 57GHz ~ 64GHz Data Rate (Max) 100Mbps Power - Out...
... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to ......
...Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state tran...
...Motorola, Inc - RF LOW POWER TRANSISTOR NPN SILICON Description: Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Applications: • Specified @ 12.5 V, 870 MHz Char...
...Motorola, Inc - MICROWAVE POWER TRANSISTORS Description: Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performanc...
...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...