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Total 39739 products for power transistor pdf Manufacture & Suppliers

High Current Silicon NPN Power Transistor ISC 2SC3709A with Low Collector Saturation Voltage Feature

...Power Transistor 2SC3709A The ISC 2SC3709A is a Silicon NPN Power Transistor designed for high current switching applications. It features a low collector saturation voltage (VCE(sat)= 0.4V(Max)@IC= 6A) and ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T...

Angel Technology Electronics Co
Hongkong,China

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RF Power Transistors BLC6G22-75 Power LDMOS transistor RF Power Transistors

BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors BLF6G10-75 Power LDMOS transistor RF Power Transistors

BLF6G10-75 IS A Power LDMOS transistor. Part NO: BLF6G10-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors BLC6G20LS-75 UHF power LDMOS transistor RF Power Transistors

BLC6G20LS-75 IS A UHF power LDMOS transistor. Part NO: BLC6G20LS-75 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors BLF7G22L-130 Power LDMOS transistor RF Power Transistors

BLF7G22L-130 is a Power LDMOS transistor. Part NO: BLF7G22L-130 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors BLF7G10LS-250P Power LDMOS transistor RF Power Transistors

BLF7G10LS-250P is a Power LDMOS transistor. Part NO: BLF7G10LS-250P Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors BLF7G10L-250P Power LDMOS transistor RF Power Transistors

BLF7G10L-250P is a Power LDMOS transistor. Part NO: BLF7G10L-250P Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors MRF21090 RF Power Field Effect Transistors MOT RF Power Transistors

MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors MRF18060A RF POWER FIELD EFFECT TRANSISTORS MOT RF Power Transistors

MRF18060A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF18060A Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors MRF374A RF POWER FIELD EFFECT TRANSISTOR FSL RF Power Transistors RF

MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors MW6S010G RF Power Field Effect Transistor FSL RF Power Transistors RF

MW6S010G is a RF Power Field Effect Transistor. Part NO: MW6S010G Brand: FSL Date Code: 393+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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RF Power Transistors MW6S010 RF Power Field Effect Transistor FSL RF Power Transistors SMD

MW6S010 is a RF Power Field Effect Transistor . Part NO: MW6S010 Brand: FSL Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited
China

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TIP107 Darlington Power Transistors (PNP) complementary silicon power transistors

TIP107 Darlington Power Transistors (PNP) complementary silicon power transistors Features �� Designed for general-purpose amplifier and low speed switching applications �� RoHS Compliant Mechanical Data Case: TO...

Anterwell Technology Ltd.
Guangdong,China

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2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINN...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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Power transistor WeEn PHE13003C 412 designed for in CFL and off line self oscillating power supplies

...Power Transistor The PHE13003C is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching speeds, high typical DC c...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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KTP 2SB772 PNP Power Transistor Silicon Based Designed for High Current Output and Power Dissipation

...Power Transistor designed for high current output up to 3A. It features low saturation voltage and serves as a complement to the 2SD882. This transistor is suitable for applications requiring efficient power...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Durable ROHM 2SAR542PT100 PNP Middle Power Transistor for in Motor Control and Power Supply Circuits

...Power Transistor The 2SAR542P is a PNP Middle Power Transistor designed for driver applications. It offers a low VCE(sat) of -0.4V Max. (IC/IB= -2A/ -100mA) and is complementary to the NPN type 2SCR542P. Thi...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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4 X 400W AB Class Stereo Power Amplifier 3U With TOSHIBA Power Transistors

...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good q...

Guangzhou Nova Acoustics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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