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Random Access Memory Price

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Total 21951 products for random access memory price Manufacture & Suppliers

Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM

...-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4...

Mega Source Elec.Limited
China

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FM16W08-SGTR Integrated Circuit IC Chip - 8Kb EEPROM Memory With SPI Interface

... Random Access Memory (SRAM) in space-saving 8-pin plastic SOP package with an access time of 15ns. Features: • Low power consumption • Wide voltage range: 1.8V to 3.6V • High performance: 15ns access time •...

Shenzhen Sai Collie Technology Co., Ltd.
China

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CY62167EV30LL-45BVXI IC Chip High Performance SRAM Fast Access Time Low Power Consumption

...: Memory Function: SRAM (Static Random Access Memory) Interface: Serial/Parallel Data Width: 32-bit Organization: 16K x 32 Speed: 45 MHz Mounting Type: ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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MX29LV640EBTI-70G Flash Memory Chips - High Speed, Low Power Consumption for Data Storage

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 3...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip MT25QU01GBBB8E12-0SIT 24-TBGA FLASH - NOR Memory IC

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR i...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

Anterwell Technology Ltd.
Guangdong,China

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Flash Memory IC Chip HYB25DC512160DE-5 - Qimonda AG - 512-Mbit Double-Data-Rate SDRAM

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a qu...

Mega Source Elec.Limited
China

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K6R4008C1D-KI10 Samsung- 256Kx16 Bit High Speed Static RAM Flash Memory IC Chip

... at Commercial and Industrial Temperature Ranges. Description: The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common in...

Mega Source Elec.Limited
China

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Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dy...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MX30LF1G08AA-TI Flash Memory Chip High Speed Low Power Storage Capacity

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a writ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Memory IC Chip MT53E2G32D4DT-046 WT:A Automotive SDRAM Mobile LPDDR4 Memory IC

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MT53E2G32D4DE-046 WT:A Memory IC Chip 64Gbit Parallel 2.133 GHz 3.5 ns Memory

...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic r...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage dev...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S29GL512P12TFIV20 - SPANSION - 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page acces...

Mega Source Elec.Limited
China

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Integrated Circuit Chip MT25QL02GCBB8E12-0AAT 2Gbit SPI 133 MHz Memory IC

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequen...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM24CL64B-GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp and 8-lead TSSOP

... I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp andamp; 8-lead TSSOP andnbsp; Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically...

TOP Electronic Industry Co., Ltd.
China

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A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power suppl...

Anterwell Technology Ltd.
Guangdong,China

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933MHz Integrated Circuit Chip MT41K512M16VRN-107 IT:P 8Gbit Memory IC 96FBGA

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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