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Total 1893 products for random access memory Manufacture & Suppliers

IS41LV16100B-60KL- 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

... is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single r...

Mega Source Elec.Limited
China

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IS41LV8205-60J - Integrated Silicon Solution, Inc - 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

...097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word. These features ...

Mega Source Elec.Limited
China

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MX29F400CTMI-90G IC FLASH 4MBIT PARALLEL 44SOP Macronix

... and reliable read/write non-volatile random access memory. The MX29F400C T/B is packaged in 44-pin SOP, 48-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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GE Fanuc PLC IC752SPL014 QuickPanel Module

... Memory (DRAM) is split between the operating system, an object store, and application memory. Additionally, a section of Non-volatile Random Access Flash Memory (NOVRAM), functioning as a virtual hard drive...

TLU Technology Co., LTD
Fujian,China

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MT48LC2M32B2P-6:G TR IC DRAM 64MBIT PAR 86TSOP II Micron Technology Inc.

..., CLK). Each of the 16,777,216-bit banks is organized as 2,048 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a...

Sanhuang electronics (Hong Kong) Co., Limited
China

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K6R4016v1C-TI10- Samsung semiconductor - 256Kx16 Bit High Speed Static RAM(3.3V Operating)

...Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Als...

Mega Source Elec.Limited
China

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MX29GL320EHT2I-70G IC FLASH 32MBIT PARALLEL 56TSOP Macronix

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory...

Sanhuang electronics (Hong Kong) Co., Limited
China

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FM24CL16B-GTR IC FRAM 16KBIT I2C 1MHZ 8SOIC Infineon Technologies

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years whil...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MX29GL256FHXFI-90Q IC FLSH 256MBIT PARALLEL 64LFBGA Macronix

... GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory...

Sanhuang electronics (Hong Kong) Co., Limited
China

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BS62LV1027PCP70- Brilliance Semiconductor - Very Low Power/Voltage CMOS SRAM

...Random Access Memory organized as 131,072 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power ...

Mega Source Elec.Limited
China

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IS42S16400J-7TL IC DRAM 64MBIT PAR 54TSOP II ISSI, Integrated Silicon Solution Inc

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM wit...

Sanhuang electronics (Hong Kong) Co., Limited
China

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IS41LV8205-60J - Integrated Silicon Solution, Inc - 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

...097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20ns per 4-bit word. These features ...

Mega Source Elec.Limited
China

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AS4C1M16E5-50JC - Alliance Semiconductor Corporation - 5V 1M×16 CMOS DRAM (EDO)

..., extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in...

Mega Source Elec.Limited
China

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MT48LC16M16A2P-6A:G TR IC DRAM 256MBIT PAR 54TSOP II Micron Technology Inc.

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MT48LC16M16A2B4-7E IT:G IC DRAM 256MBIT PAR 54VFBGA Micron Technology Inc.

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W949D6DBHX5I IC DRAM 512MBIT PAR 60VFBGA Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W949D2DBJX5I IC DRAM 512MBIT PAR 90VFBGA Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

Product Details GENERAL DESCRIPTION The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 con...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W9812G6KH-6 IC DRAM 128MBIT PAR 54TSOP II Winbond Electronics

Product Details Description W9812G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words x 4 banks x 16 bits. W9812G6KH delivers a data bandwidth of up to 200M words per sec...

Sanhuang electronics (Hong Kong) Co., Limited
China

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W9464G6KH-5 IC DRAM 64MBIT PAR 66TSOP II Winbond Electronics

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words �� 4 banks �� 16 bits. Using pipelined architecture and ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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