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...°C - +80°C Storage Lifetime: More than 10 years Operating System: Win98/ME/2000/XP/ Vista/7 , OS 9.X/Linux2.4 Convenient to carry Easy to read and read in high speed No need drive, only plug in...
AT24C512C-SSHD-T EEPROM Memory IC 512Kb (64K x 8) I²C 1MHz 550ns 8-SOIC Description AT24C512C provides 524,288 bits of Serial Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 65,536...
Flash Memory Chip GD25Q80CSIG SOP 8 8Mbit SPI Dual / Quad SPI Flash GigaDevice GD25Q80CSIG 8Mb SPI 2.7V-3.6V SOP8. With read speed up to 120MHz and Standard/Dual/Quad I/O operations, GigaDevice SPI NOR Flash su...
... SRAM) Memory IC 16Mb Parallel 100 Ns 36-EDIP FEATURES 5 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-pow...
Integrated Circuit Chip MT40A2G8SA-062E IT:F SDRAM DDR4 Memory IC 78FBGA IC Chip Product Description Of MT40A2G8SA-062E IT:F MT40A2G8SA-062E IT:F A single READ or WRITE operation for the DDR4 SDRAM consists of...
... read and write throughput. The DDR protocol transfers two data bytes per clock cycle on the DQ input/output signals. Specification Of S70KS1282GABHM023 Part ......
Product Listing: GD25Q256DYIGR Flash Memory Chips Product Parameters: - Capacity: 256Mb - Operating Voltage: 2.7V to 3.6V - Read Speed: 80Mhz - Write Speed: 40Mhz - Access Time: 85ns - Package: 8-pin WSON - Ope...
...-10G Flash Memory Chips Product Features: - Capacity: 512Mbit - Voltage: 1.8V/3V/3.3V/5V - Operating Temperature: -40°C to +85°C - Endurance: 100,000 write/erase cycles - Data Retention: 10 years - Write Spe...
...Endurance: 10,000 Program/Erase Cycles • Data Retention: 20 years • Read Latency: 25ns • Write Latency: 85ns • Clock Frequency: 66MHz • Data Transfer Rate: 133MB/s • Bus Width: 8-bit Why ......
Product Listing: MX30UF4G18AB-XKI Flash Memory Chip Capacity: 4GB Organization: 8Mx32 Voltage: 1.8V Interface: ONFI 3.0 Package: 54-ball FBGA Read Speed: up to 133MB/s Write Speed: up to 40MB/s How to buy >>> ...
Flash Memory Chip W632GG6NB09J Product Features: 1. Capacity: 16GB 2. Type: NAND Flash 3. Speed: up to 866MB/s read and 621MB/s write 4. Low power consumption 5. High durability 6. Easy and reliable operation 7...
... Retention: 20 Years - Endurance: 100,000 Erase/Program Cycles - Page Size: 4KB - Read/Write Speed: 166MHz - Interface: 1.8V/3.3V - Packaging Type: Tray - RoHS Compliant: Yes Why buy from us >>> Fast / Safel...
...: MT46V32M16CY-5B IT:J Flash Memory Chips Specifications: - Capacity: 32Mbit (4M x 8bit) - Technology: CMOS - Organization: 4M x 8bit - Speed: 66MHz - Supply Voltage: 3.3V ± 0.3V - Operating Temperature: -40...
NAND512W3A2SN6E Flash Memory Chips Product Features: - Capacity: 512Mb - Package Type: TSOP48 - Voltage: 3V - NAND Flash Technology - Supports x8/x16 I/O - High-performance Read and Program Operations - Low Pow...
... from -40°C to 85°C - High speed read/write performance - Programmable instruction set for flexibility - Low power consumption for extended battery life - Durable and reliable construction - ......
Product Listing: MX25V5126FZUI Flash Memory Chips Parameters: - Capacity: 5Mb - Operating Voltage: 2.7V - 3.6V - Operating Temperature: -40C to 85C - Read/Write Speed: 66MHz - Flash Endurance: 100K Program/Er...
... - Read/Write Speed: 25MHz/25MHz - Endurance: 100,000 Program/Erase cycles - ECC: Built-in BCH ECC Why buy from us >>> ......
... Erase/Program Cycles • Endurance: 10,000 Program/Erase Cycles • Data Retention: 20 Years • Features: Fast Read and Program, Low Power, Enhanced Security,...
Product Listing: M25P16-VMF6TP TR Flash Memory Chips Specifications: Capacity: 16Mb Voltage: 2.7V to 3.6V Operating Temperature: -40C to +85C Read/Write Speed: 25MHz Package: 8-pin SOIC Endurance:...
Product Listing: MX25L3233FM1I-08G Flash Memory Chip Features: • Capacity: 8GB • Voltage: 2.7V to 3.6V • Supply Current: Active: 40mA; Standby: 0.1mA • Write/Erase Cycles: 100K • Read Speed: 80MHz • Operating T...