| Sign In | Join Free | My burrillandco.com |
|
...Circuit Design Custom Usb Audio Interface Ic Chip PCBA Integrated Circuit Development Technical Support and Services Provide comprehensive engineering and design services for integrated circuit development. ...
#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:...
RF Integrated Circuit Chip BYG23M-E3-TR Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • ......
CuClad 217 Copper Clad Laminate: The Pinnacle of Low-Loss, Isotropic Performance for Demanding RF/Microwave Circuits As your dedicated supplier for precision high-frequency materials, we introduce the CuClad 21...
...Circuit Design Stable Design 90 Degree SMT Magazine Loader YS-LDM Automatical Diagnosing Special Gas Circuit Design Stable Design 90 Degree SMT Magazine Loader Key Features Strong, firm and stable design con...
Product Overview The J111, J112, and J113 series are N-Channel switches designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. These devices offer interchangeable ...
Product Overview The BC846 to BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. Complementary PNP transistors in the BC856 to BC860 series are recommended for...
Product Overview MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configura...
Product Overview Plastic-encapsulated transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in various models with distinct marking codes.Product At...
Product Overview The BC856 is a PNP bipolar transistor designed for automatic insertion, making it ideal for switching and AF amplifier applications. It is complementary to the BC846 and is available in a surfa...
Product Overview Plastic-encapsulate transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in SOT-23 package.Product Attributes Brand: GUANGDONG HOT...
Product Description The FC3356G is a high-frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise figure, wid...
Product Overview The BC846-BC848 series are NPN epitaxial planar die construction transistors in a SOT-23 small outline plastic package. They are designed for switching and AF amplifier applications. These devi...
Product Overview These NPN dual general-purpose transistors are designed for amplifier applications and are housed in the SOT363/SC88 package, suitable for low-power surface mount applications.Product Attribute...
...PNP transistors ideally suited for automatic insertion, switching, and AF amplifier applications. These devices offer a range of electrical characteristics to suit various design needs. Product Attributes Br...
Product Overview The TOSHIBA 2SC4207 is a silicon NPN epitaxial transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small package (dual type)...
...Transistor Silicon NPN Epitaxial Type The TMBT3904 is a silicon NPN epitaxial transistor from TOSHIBA, designed for audio frequency general purpose amplifier applications. It offers high voltage and high cur...
2SC4116 Bipolar Transistor The 2SC4116 is a silicon NPN epitaxial transistor designed for low-frequency amplification, audio frequency general purpose amplification, and AM amplifier applications. It offers hig...
Product Overview The UTC 2SA1020 is a PNP silicon epitaxial transistor designed for power amplifier and power switching applications. It features a low collector saturation voltage (VCE(SAT) = -0.5V MAX at IC =...
Product Overview The 2SA1832 is a silicon PNP epitaxial bipolar transistor designed for low-frequency amplifier applications. It offers high voltage (VCEO = -50 V) and high collector current (IC = -150 mA max) ...