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...Chip NVBG060N090SC1 D2PAK-7 Surface Mount Transistors Product Description Of NVBG060N090SC1 NVBG060N090SC1 provides reliable, high-efficiency performance for energy infrastructure and industrial drive applic...
...): 3.9W (Ta), 113W (Tc) Pulsed Drain Current(TA = 25°C, Tp = 10us): 900A Current - Continuous Drain (Id) @ 25°C:...
...Chip NVH4L020N120SC1 N-Channel Transistors TO-247-4L Product Description Of NVH4L020N120SC1 NVH4L020N120SC1 device has optimum performance when driven with a 20V gate drive but also works well with an 18V ga...
... IGBT solutions while lowering the total cost of ownership for high-voltage applications. Specification Of MSC040SMA120 Part Number MSC040SMA120 Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V Vgs(th) (Max) @...
...Chip MSC015SMA070 Transistors N-Channel 700V 131A 400W Through Hole TO-247-3 Product Description Of MSC015SMA070 The MSC015SMA070 silicon carbide (SiC) power MOSFET product line increases the performance ove...
... FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain To Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20 V Features Of...
...: 70ns • Advanced write protection schemes • Page Program and Byte/Word Program • Low power consumption • Support for Security ID and...
... • Dimensions: 3.9mm x 4.9mm x 0.9mm • Security: 64-bit Unique ID • Reliability: 100K Erase/Program Cycles • Endurance: 10,000 Program/Erase Cycles • Data Retention: 20 Years • ......
... Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Id - Continuous Drain Current: 127 A Rds On...
...Chip TO-247-4 Silicon Carbide Junction Transistor Product Description Of IMYH200R075M1H IMYH200R075M1H is CoolSiC™ 2000 V SiC Trench MOSFET, Silicon Carbide Junction Transistor. Specification Of IMYH200R075...
...Chip Product Description Of IMBG65R107M1H IMBG65R107M1H provides an integrated ultra-fast body diode allowing usage in resonant topologies with the lowest reverse recovery charge. Specification Of IMBG65R107...
...Chip IMBG120R060M1H TO-263-8 1200V SiC Trench MOSFET Transistors Product Description Of IMBG120R060M1H IMBG120R060M1H is CoolSiC™ 1200V SiC Trench MOSFET N-Channel Transistors with .XT interconnection techn...
... FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Continuous Drain (Id) @ 25°C 19A (Tc) Drive Voltage (Max Rds On...
...Chip IMZ120R030M1H Silicon Carbide N-Channel Transistors TO-247-4 Product Description Of IMZ120R030M1H IMZ120R030M1H is 1200V N-Channel Single FETs MOSFETs Transistors, package is TO-247-4, Through Hole. Sp...
... environment applications. Specification Of IMBG65R022M1H Part Number: IMBG65R022M1H Vds - Drain-Source Breakdown Voltage: 650 V Transistor Polarity: N-Channel Id - Continuous Drain Current: 33 A...
... Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id -...
...Chip IMW65R083M1H SiC MOSFET N-Channel 650V Transistors Product Description Of IMW65R083M1H IMW65R083M1H CoolSiC™ MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compro...
...Chip Product Description Of IAUC60N04S6N031H IAUC60N04S6N031H is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet curren...
..., Surface Mount. Specification Of IAUT240N08S5N019 Part Number IAUT240N08S5N019 Budgetary Price €/1k 1.9 ID (@25°C) max 240 A IDpuls max 960 A Operating Temperature min max -55 °C 175 °C Ptot max 230 W ......
...Chip MSC025SMA120J N-Channel Power MOSFET Transistors Product Description Of MSC025SMA120J MSC025SMA120J combine a formidable array of technologies into a single package, optimized for reliability, efficienc...