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N-Channel IMBG65R030M1HXTMA1 MOSFET Transistors TO-263-8 Integrated Circuit Chip Product Description Of IMBG65R030M1HXTMA1 IMBG65R030M1HXTMA1 is CoolSiC MOSFET 650 VSiC MOSFET in a compact 7-pin SMD package b...
...MOSFETs Transistors TO-247-3 Product Description Of NVHL050N65S3HF NVHL050N65S3HF is new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-res...
Integrated Circuit Chip SCTWA60N120G2-4 Silicon carbide Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET desig...
... ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
Operational Amplifier Power Mosfet Transistor / general purpose mosfet LM741H , 500 mW General Description The LM741 series are general purpose operational amplifiers which feature improved performance over ind...
Automotive IGBT Modules CBB032M12FM3 Mosfet Array 1.2kV MOSFET Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guarantee...
Automotive IGBT Modules BSM300D12P3E005 300A Mosfet Array MOSFET Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guarant...
Automotive IGBT Modules NXH010P120MNF1PTNG Mosfet Array EliteSiC MOSFET Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...
3DD5601I-O-I-N-B is a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Part NO: 3DD5601I-O-I-N-B Brand: FUJITSU Date Code: 0228+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic...
MMG3001NT1 is a Heterojunction Bipolar Transistor Technology (InGaP HBT). Part NO: MMG3001NT1 Brand: FSL Date Code: 118+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD...
MMG3002NT1 is a Heterojunction Bipolar Transistor Technology (InGaP HBT). Part NO: MMG3002NT1 Brand: FSL Date Code: 119+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD...
PRF7S38045 is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. Part NO: PRF7S38045 Brand: FSL Date Code: 183+ Quality War...
PRF8P20165WHS. is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. Part NO: PRF8P20165WHS. Brand: FSL Date Code: 189+ Qua...
PRF8P20165WHS. is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. Part NO: PRF8P20165WHS. Brand: FSL Date Code: 189+ Qua...
PTB2015/R is a 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor. Part NO: PTB2015/R Brand: FSL Date Code: 366+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes...
PTF10160 is a 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor . Part NO: PTF10160 Brand: FSL Date Code: 367+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD speci...
...RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless commun...
... of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor...
Product Overview The BFR340F is a low noise, silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering l...
Product Overview The BFP640ESD is a robust silicon NPN RF bipolar transistor from Infineon's sixth generation transistor family, utilizing SiGe:C technology. It offers high RF gain, low noise figure, and excell...