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HMC849ALP4CETR RF Power Transistor High Power Low Noise Performance HMC849ALP4CETRR RF Power Transistors Product Features: -Operating Frequency: up to 4.5GHz -Gain: 11-14dB -Single-ended Output Power: +30dBm -P...
ADF5901WCCPZ RF Power Transistor High Output Power And Efficiency Product Listing: ADF5901WCCPZ RF Power Transistors Features: Broadband Coverage from 2.3 to 2.7GHz Output Power: 43.5dBm (400W) @ 2.5GHz H...
MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High freq...
MRF858 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRF858 Brand: MOTOROLA Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF20030 is a RF POWER TRANSISTOR. Part NO: MRF20030 Brand: MOTOROLA Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF422 is a RF POWER TRANSISTORS NPN SILICON. Part NO: MRF422 Brand: MOTOROLA Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview ......
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extreme...
...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan...
NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Cur...
AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous...
AO4449 MOSFET Power Electronics Single FETs MOSFETs Transistors P-Channel 30V 7A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Con...
AON7421 MOSFET Power Electronics FETs MOSFETs Transistors P-CH 20V 30A Package 8-DFN-EP FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 2...
MOSFET Power Electronics MGSF2N02ELT1G SOT-23 Package 2.8 A 20 VN Channel Enhancement Mode MOSFET Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Cont...
...Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may b...
Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25C 49A (Tc) Drive Voltage (Max Rds On, ...
Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube P...
HMC536LP2E RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This...
TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..............
SI4438-C2A-GMR RF Power Transistor Product Features: - Ideal for RF power amplifier applications - High gain and efficiency - Low drive power - High frequency operation - Low output noise - ......
CYW20704UA2KFFB1GT RF Power Transistor Single-Chip Bluetooth Transceiver and Baseband Processor Package 49-VFBGA Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 +EDR Modulation 4DQPSK, 8DPS...