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Rf Power Divider

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Total 10008 products for rf power divider Manufacture & Suppliers

868MHz Wireless Data Radio Transceiver With 30W RF Power PTP Transmission

868MHz Wireless Radio Data Transceiver with 30W RF Power PTP Transmission Features of Radio Data Transceiver: ◆ Transmission rate: 1200bps, 2400bps, 4800bps, 9600bps, 115200bps ◆ Voice or data ......

Kimpok Technology Co., Ltd
China

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5W Full RF Power Long Range Wireless Video Transmitter 1.2Ghz BNC Input

5W Full RF Power Long Range Wireless Video Transmitter 1.2Ghz BNC Input Long Range Wireless AV transmitter Features: 1. Wireless transmission: no need to set up communications cable 2. Image, audio sync, color ...

Kimpok Technology Co., Ltd
China

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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor Description The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz. It features high gain, wide band and low cost, in 4...

Sanhuang electronics (Hong Kong) Co., Limited
China

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7W Gallium Nitride RF Power Transistor with Wide Bandwidth DC to 7.2GHz

INNOTION 7W 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched ......

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu,China

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Microphonic Suppression MOS Capacitors HACC471S50V500 470 pF 50V Single Layer Chip for RF Power Amplifiers

... (>1000 Ω·cm) with a 300 nm thermally grown SiO2 dielectric. It is designed for RF power amplifier bias networks, DC blocking, and impedance matching where vibration-induced phase modulation and microphonic ...

HongAn Microwave Co., Ltd.
China

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Self-Heating Thermal Smoothing MOS Capacitors HACC222S50V1000 2200 pF 50V SLC Chip for RF Power Amplifiers

... metallized TiW-Pt-Au backside create a low-thermal-resistance path that redistributes and smooths self-generated heat in RF power...

HongAn Microwave Co., Ltd.
China

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1200w Small Double Beam Spectrophotometer Solid State Rf Power Supply

... rf power supply, with small size, high efficiency, stable output power, with a variety of protection functions and many other advantages, the load using fully automatic matching technology, matching speed, ...

Macylab Instruments Inc.
Beijing,China

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CRCW120649R9FKTA---Freescale Semiconductor, Inc - RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral

...RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Specifications: Datasheets Dx-CRCWx Series Thick Film Chip Resistor Guide Product Photos 541-1206 (3216) CRCW-1206 Standard Pack...

Mega Source Elec.Limited
China

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Suitcase Portable Cell Phone Signal Jammer Built-in cooling system Middle RF Power Jammer

... a middle RF power cell phone jammer with handbag Suitcase design. The jammer is designed to protect VIP person or special agent. It is developed on explicit requests of the military and governmental institu...

Wolves Team Limited
China

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LTCC 140Mhz Bandpass Customized Rf Power Splitter

... Bandpass Customized Rf Power Splitter The technical advantages of our LTCC filter: 1. LTCC ceramic low temperature co-firing process, unique structure and high stability 2. Small size, light weight, high in...

hanse-john electronic Co.,Ltd.
Jiangsu,China

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Customized 170 Mhz LTCC Rf Power Splitter Combiner

...Small size, light weight, high integration, low power consumption, excellent performance, high reliability, good temperature stability, and good product performance consistency; 3. The frequency response cha...

hanse-john electronic Co.,Ltd.
Jiangsu,China

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BLF2425M7LS140 TRANSISTOR RF POWER LDMOST Integrated Circuit Chip

BLF2425M7LS140 TRANSISTOR RF POWER LDMOST Integrated Circuit Chip 218-0755042 Computer GPU CHIP AMD IC Model number QTY MFG ......

Mega Source Elec.Limited
China

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RF Power Transistors MRF571 - Motorola, Inc - NPN Silicon High-Frequency Transistors

Quick Detail: MRF571 - Motorola, Inc - NPN Silicon High-Frequency Transistors Description: Designed for low noise, wide dynamic range front��end amplifiers and low��noise VCO��s. Available in a surface��mountable p...

Mega Source Elec.Limited
China

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B4124 SAW Components Low-Loss Filter for Mobile Communication 942,5 MHz RF Power Transistors

B4124 is a SAW Components Low-Loss Filter for Mobile Communication 942,5 MHz . Part NO: B4124 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws...

Mega Source Elec.Limited
China

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BD1222J50200A09 Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced RF Power Transistors

BD1222J50200A09 is a Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced. Part NO: BD1222J50200A09 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws...

Mega Source Elec.Limited
China

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BD1222J50200A15 Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced RF Power Transistors

BD1222J50200A15 is a Ultra Low Profile 0805 Balun 50�� to 200�� Balanced. Part NO: BD1222J50200A15 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD s...

Mega Source Elec.Limited
China

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PTF10153 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor RF Power Transistors

PTF10153 is a 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor . Part NO: PTF10153 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Competitive Advantage: Warranty :180days for all go...

Mega Source Elec.Limited
China

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PTF10149 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor RF Power Transistors

PTF10149 is a 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor . Part NO: PTF10149 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Competitive Advantage: Warranty :180days for all go...

Mega Source Elec.Limited
China

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PTF10119 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor RF Power Transistors

PTF10119 is a 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor. Part NO: PTF10119 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Competitive Advantage: Warranty :180days for all goo...

Mega Source Elec.Limited
China

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PTF16006 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor RF Power Transistors

PTF16006 is a 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor. Part NO: PTF16006 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Competitive Advantage: Warranty :180days for all goods F...

Mega Source Elec.Limited
China

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