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HMC544AE RF Power Transistor Features: - High Output Power: 28 dBm Typical - High Gain: 14 dB Typical - Low Noise Figure: 2 dB Typical - Excellent Linearity - Wide Bandwidth: 600 MHz - RoHS Compliant Package: S...
...Listing: Product: AD8342ACPZ-REEL7 RF Power Transistors Package: Reel Configuration: Single Operating Frequency Range: DC - 6GHz Gain: 17 dB Noise Figure: 1.7 dB Power Supply: +5.0V Supply Current: 5.0mA Sup...
...RF Power Divider Low VSWR 2.92 Female Connector 1 Advantages about rf power divider: 1. Low Insertion Loss, High power handling. 2. High quality, Low price, Fast delivery. 3. Custom design available upon re...
...reverse, they are also used as combiners by combining multiple signal into one.SHX-GF4-2 resistive power splitter is used in broad-band transmission and reflect coefficient test by separating signals in orde...
...-class time base, 20 Msample/s digitiser and sensor interface into a 2-U chassis that reads peak, average and time-gated RF power from 9 kHz to 110 GHz with a wide –70 dBm to +44 dBm span. Up to 1,000 correc...
MRF136 is a N-CHANNEL MOS BROADBAND RF POWER FETs. Part NO: MRF136 Brand: FSL Date Code: 120+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
MRF7S27130HS is a RF Power Field Effect Transistors. Part NO: MRF7S27130HS Brand: FSL Date Code: 121+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in Hig...
MD7P19130HS is a RF Power Field Effect Transistor. Part NO: MD7P19130HS Brand: FSL Date Code: 196+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High f...
MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
MRF21125R5 is a RF Power Field Effect Transistor. Part NO: MRF21125R5 Brand: FSL Date Code: 268+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High fre...
MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality ......
MRF21045LR3 is a RF Power Field Effect Transistor. Part NO: MRF21045LR3 Brand: FSL Date Code: 369+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High f...
MD7P19130H is a RF Power Field Effect Transistor. Part NO: MD7P19130H Brand: FSL Date Code: 391+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High fre...
MW6S010N is a RF Power Field Effect Transistor . Part NO: MW6S010N Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High f...
...RF Power Amplifier Module Technical Specifications: NO. Item Description Min Typical Max Unit 1 Frequency Band A B C D E 7.25 7.75 8.0 8.4 7.5 8.5 8.0 9.0 10.0 10.5 GHz 2 Gain Selectable 50 60 dB 3 Gain Flat...
...RF Power Transistors Features & Benefits: • High Gain: 18.0 dB typ. at 900 MHz • High Efficiency: 33.0% typ. at 900 MHz • Low Thermal Resistance: 0.20°C/W typ. • Low Reverse Transfer Capacitance: 7.0 pF typ....
BGT24LTR11N16E6327XTSA1 RF Power Transistors Silicon Germanium 24GHz RadarTransceiver MMIC Frequency 24GHz ~ 24.25GHz Power - Output 6dBm Serial Interfaces - Voltage - Supply 3.3V Current - Receiving 45mA Curre...
... solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain — 12 dB (14 dB Typ) Efficiency — 50% Applications:...
...30W, 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Application...
...150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency — 55% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at ......