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... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
... instructions: 1. Overall dimensions: 170*94*26.5mm 2. Interface form: Power supply conditions: +30V power supply: 7W2 (male) RF input interface: SMA-KFD (optional) RF output interface: N-KFD Control interfa...
...power wireless transceiver data module is used as the wireless data transceiver in short-ranges, with the small size, weight and power consumption and good stability and reliability. Narrowband low power UHF...
SI4702-C19-GMR RF Power Transistors Product Overview: The SI4702-C19-GMR is a high performance RF power transistor designed for RF power amplifier applications in industrial and consumer applications. This devi...
...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR off...
HMC849ALP4CETR RF Power Transistor High Power Low Noise Performance HMC849ALP4CETRR RF Power Transistors Product Features: -Operating Frequency: up to 4.5GHz -Gain: 11-14dB -Single-ended Output Power: +30dBm -P...
...RF Jammer Module For Different Frequency No. Item Data Unit Note 1 Frequency CDMA/GSM850 :850-894 GSM900 :925-960 GSM/DCS1800 :1805-1880 3G/UMTS2100 :2110-2170 4GLte700 :790-826 4G/WiMAX2600 :2620-2690 WIFI2...
RF Power Amplifier 40dBm SMA/N CW Signal Product Description: RF Power Amplifier The RF Power Amplifier is designed for high power radio applications. It offers excellent gain 40dB, and input power from 0dBm to...
MW7IC008NT1 is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW7IC008NT1 Brand: FSL Date Code: 10+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
MW6IC2240 is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW6IC2240 Brand: FSL Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
MHVIC910HNR2 is a 921 MHz-960 MHz SiFET RF Integrated Power Amplifier. Part NO: MHVIC910HNR2 Brand: FSL Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
MHVIC910HNR is a 921 MHz-960 MHz SiFET RF Integrated Power Amplifier. Part NO: MHVIC910HNR Brand: FSL Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......
...RF Power Transistor Product Features: - Ideal for RF power amplifier applications - High gain and efficiency - Low drive power - High frequency operation - Low output noise - Low distortion - Wide temperatur...
... offers superior performance in terms of output power, gain, linearity and efficiency. It is a high-power, high-efficiency device that can be used in digital and analog applications. Product Features: • High...
... RF Power Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of producing up to ...