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Total 10008 products for rf power mosfet Manufacture & Suppliers

NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors

NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......

Mega Source Elec.Limited
China

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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better char...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

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F7N65L TO-220F-3L N-CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors

...POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better chara...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

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F10N65L TO-220F-3L N-CHANNEL POWER MOSFET 10A 650V Applications In Switching Power Supplies And Adaptors

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

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F12N65L TO-220F-3L N-CHANNEL POWER MOSFET 12A 650V Applications In Switching Power Supplies And Adaptors

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

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F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

Active Member

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F20N65L TO-220F-3L N-CHANNEL High Power MOSFET 20A 650V Applications In Switching Power Supplies And Adaptors

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

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MRF6S19140HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Freescale RF Power Transistors

MRF6S19140HSR3 is a N-Channel Enhancement-Mode Lateral MOSFETs . Part NO: MRF6S19140HSR3 Brand: Freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD...

Mega Source Elec.Limited
China

Verified Supplier

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MRF6S19140HS N-Channel Enhancement-Mode Lateral MOSFETs Freescale RF Power Transistors

MRF6S19140HS is a N-Channel Enhancement-Mode Lateral MOSFETs . Part NO: MRF6S19140HS Brand: Freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD spe...

Mega Source Elec.Limited
China

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D7N65 TO-252W N-CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors

...POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged ...

Shenzhen Hunt Electronics Co., Ltd
Guangdong,China

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ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module

RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and lo...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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6GHz RF Power Amplifier Module SMA-F 28V 100g With Signal Source RF Jamming Module

RF Power Amplifier Module SMA-F 28V 100g with signal source built-in, RF Jamming module Product Description: RF Power Amplifier Module is a high-performance RF power amplifier with built-in VCO, integrating a h...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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100g RF Power Amplifier Module 10-20W Output Power Built In VCO RF Jamming Module

... solution for applications requiring accurate, low-noise amplification. This module offers excellent RF performance with a wide gain range of 30 to 40dB, gain flatness of ≤±0.5dB, noise figure of 2.5dB, VSWR...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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2.5dB 2.4G RF Power Amplifier Module RF Jamming Module 100g ≤2ns Group Delay

... harmonic suppression of ≤-30dBc, input/output impedance of 50Ω, weight of 100g, spurious suppression of ≤-60dBc and VSWR of 1.5:1. Our RF Jammer Modules are designed for maximum performance and optimal effi...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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PA RF Linear Power Amplifier With 75-100 Watt RF Power 900 MHz -980 MHz

... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......

Kimpok Technology Co., Ltd
China

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Military 14.0-14.5GHz ECM Rf Power Amplifier 40MHz

...Rf Power Amplifier Ku Band 14.0GHz to 14.5GHz Frequency range high Power military level Ku Band RF Power Amplifier PA , RF Power Amplifier Module Technical Specifications of Power Amplifier: NO. Item Descrip...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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X-Band RF Power Amplifier Module Wide Operating Temperature Range, Super High Frequency PA High Power High Gain

X-Band (10GHz) RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF Modules including radio frequency signal source,radio frequency power am...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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900MHz -980MHz Linear RF Power Amplifier 100 Watt Power 27VDC

...RF Power Amplifier with 100 Watt RF Power Specification: Item Specification Frequency Range GSM 900MHz~980MHz Customized Gain 50dB Max RF Output Power 48.5dBm-50dBm Input Range ≤10dBm Gain Adjust Range 31dB ...

Kimpok Technology Co., Ltd
China

Site Member

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Easy Installation RF Power Amplifier Module 5850MHz - 6425MHz Output Frequency Range

...Band 3625 - 4200MHz RF Downconverter , L-Band 950MHz - 1525MHz RF Downconverter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency s...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

Verified Supplier

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1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

1-2GHz , L-Band , RF Low Noise Amplifier LNA , RF Power Amplifier Module Model: VBP2GL VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequ...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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