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Total 39210 products for rf power transistors Manufacture & Suppliers

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURE...

Anterwell Technology Ltd.
Guangdong,China

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BLF178XR 28dB Mosfet Power Transistor 50V 40mA 108MHz Frequency

...RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 M...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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BLF178XR 28dB Mosfet Power Transistor 50V 40mA 108MHz Frequency

...RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 M...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MW7IC2725NR1 F LDMOS Wideband Integrated Power Amplifiers FREESCALE Power Transistors RF

MW7IC2725NR1 is a F LDMOS Wideband Integrated Power Amplifier. Part NO: MW7IC2725NR1 Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD spe...

Mega Source Elec.Limited
China

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Ultra band 1000-2000MHz 47dBm Gain RF power amplifier Module for anti drone system

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and r...

Amplifier module
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu,China

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BLF6G10LS-135RN RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin

...RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 32 A Vds - Dra...

Wisdtech Technology Co.,Limited
Guangdong,China

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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Cate...

Walton Electronics Co., Ltd.
China

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ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Cate...

Walton Electronics Co., Ltd.
China

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SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number...

Wisdtech Technology Co.,Limited
Guangdong,China

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consumption RF bipolar transistor Infineon BFR843EL3E6327XTSA1 with high speed and noise performance

... of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dr...

Anterwell Technology Ltd.
Guangdong,China

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BLF177 MRF150 RF MOSFET Transistors 5-150MHz 150Watts 50Volt Gain 17dB

... On - Drain-Source Resistance: - Operating Frequency: 150 MHz Gain: 17 dB Output Power: 150 W Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Ca...

Wisdtech Technology Co.,Limited
Guangdong,China

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AFT05MS003NT1 NXP MOSFET Transistors N Channel 500mV 30V RF Power

...Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacture...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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AFT05MS003NT1 MOSFET Transistors N Channel 500mV 30V RF Power

... Attribute Value Manufacturer: Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 2.6 A Vds - Drain-Source Breakdown Voltage: - 500 mV, ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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1.2GHz 30W GaN Transistors Anti Drone Module RF Power Amplifier Module for Drone Defense

... and customizable frequency/power options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact de...

Chongqing Miao Yi Tang Technology Co., Ltd.
China

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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 1...

Anterwell Technology Ltd.
Guangdong,China

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MRF9030GNR1 power mosfet module Power Mosfet Transistor RF POWER FIELD EFFECT TRANSISTORS

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and ...

ChongMing Group (HK) Int'l Co., Ltd
China

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