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Total 39210 products for rf power transistors Manufacture & Suppliers

600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor

...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown voltage: 65 V Operating ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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10 - 13GHz Broadband RF Power Amplifier Hybrid Micro Assembly Process, Wide-Band RF Power Amplifier

...-13GHz , Ku-Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency pow...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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5850 - 6425MHz Rf Power Module , Radio Frequency Amplifier With SMA / BNC Connector

C-Band 5850-6425MHz RF Up converter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain

2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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20W RF Power Amplifier Module 50Ω Spurious Suppression ≤-60dBc Input Output Impedance

... of ≤-30dBc. Its operating temperature range is from -40℃ to +85℃ with a VSWR of 1.5:1. The connector type is SMA-F. This module is ideal for applications requiring high power and high reliability in...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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2.4 GHz RF Power Amplifier High Power 50dBm Gain LAN 2kg Weight

...Power RF Power Amplifier 50dBm Gain LAN 2kg Weight Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF powe...

Kimpok Technology Co., Ltd
China

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43dBm High Power Linear Amplifier , linear rf power amplifier 1550MHz-1590 MHz

High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high ...

Kimpok Technology Co., Ltd
China

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High Power 100W RF Power Amplifier 60dBm 1250MHz For Wireless Equipment

... the interference of high radiated RF power to monitoring-unit and PA-Circuit; We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......

Kimpok Technology Co., Ltd
China

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Customized Ultra-Broadband 400-6000MHz All-Alumium Cavity Solid State RF Power Amplifier for Electronic Warfare

...RF Power Amplifier for Electronic Warfare The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features includ...

Nanjing Shinewave Technology Co., Ltd.
China

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400-3000MHZ Broadband Wide Band 50W RF Power Amplifier Module

... 50W RF Power Amplifier Module This 400-3000MHz RF Module 50W Power Amplifier is a no signal source power amplifier module delivering 50W output power. Available in multiple frequency ranges including 400-30...

Pinnacle Technology Co., Limited
China

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Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage super��junction (SJ) MOSFET family that is utilizing charge balance technology for o...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Packa...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors

Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage super��junction (SJ) MOSFET family that is utilizing charge balance technology for o...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Packa...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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5.8G 10W RF Power Amplifier Module 50Ω Input Output Impedance 2.5dB Noise Figure ≤-30dBc Harmonic Suppression

.... With high performance Spurious Suppression of ≤-60dBc, Gain Flatness of ≤±0.5dB, Noise Figure of 2.5dB, Gain of 30 To 40dB and Output Power of 10 To 20W, our RF Jammer Module will meet your different needs...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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GPS 2.4G 5.8G RF Power Amplifier Module -20℃~+85℃ ≤-30dBc 20MHz-6GHz Selectable

...used to suppress unwanted signals. This RF Jammer Module features a Noise Figure of 2.5dB, a size of 130*35*15mm, Spurious Suppression below -60dBc, and a Frequency Range of ......

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Anritsu ML2437A RF Power Meter with Graphics Display Ruggedized Housing and 90 dB Dynamic Range

Anritsu ML2437A RF Power Meter With Graphics Display Ruggedized Housing Product Overview The ML2437A and ML2438A Power Meters combine the advantages of thermal meter accuracy, diode meter speed, and peak power ...

Shenzhen Meigaolan Electronic Instrument Co. Ltd
China

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High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging Tube Part Stat...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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FGH20N60SFD Field Stop IGBT Power Transistors 600V 20A 165W Through Hole

FGH20N60SFD IGBT Power Transistors 600V 20A Field Stop 165W Through Hole Description Using Novel Field Stop IGBT Technology, ON Semiconductor��s new series of Field Stop IGBTs offer the optimum performance for A...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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Rf Power Transistors

Total 39210 products for rf power transistors Manufacture & Suppliers

600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor

PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

10 - 13GHz Broadband RF Power Amplifier Hybrid Micro Assembly Process, Wide-Band RF Power Amplifier

5850 - 6425MHz Rf Power Module , Radio Frequency Amplifier With SMA / BNC Connector

Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain

20W RF Power Amplifier Module 50Ω Spurious Suppression ≤-60dBc Input Output Impedance

2.4 GHz RF Power Amplifier High Power 50dBm Gain LAN 2kg Weight

43dBm High Power Linear Amplifier , linear rf power amplifier 1550MHz-1590 MHz

High Power 100W RF Power Amplifier 60dBm 1250MHz For Wireless Equipment

Customized Ultra-Broadband 400-6000MHz All-Alumium Cavity Solid State RF Power Amplifier for Electronic Warfare

400-3000MHZ Broadband Wide Band 50W RF Power Amplifier Module

Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors

Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors

Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage

5.8G 10W RF Power Amplifier Module 50Ω Input Output Impedance 2.5dB Noise Figure ≤-30dBc Harmonic Suppression

GPS 2.4G 5.8G RF Power Amplifier Module -20℃~+85℃ ≤-30dBc 20MHz-6GHz Selectable

Anritsu ML2437A RF Power Meter with Graphics Display Ruggedized Housing and 90 dB Dynamic Range

High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK

FGH20N60SFD Field Stop IGBT Power Transistors 600V 20A 165W Through Hole