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Rf Transistor Amplifier

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Total 16522 products for rf transistor amplifier Manufacture & Suppliers

28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip

...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth ...

Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu,China

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10 - 13GHz Broadband RF Power Amplifier Hybrid Micro Assembly Process, Wide-Band RF Power Amplifier

...-Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency power amplifie...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain

... , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power amplifier...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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NPN Silicon RF Transistor for Broadband Amplifiers Infineon BFS17SH6327 Collector Current 1 to 20 mA

Product Overview The BFS17S is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It is suitable for collector currents ranging from 1 mA to 20 mA. This Pb-free (RoHS compliant) package ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers

Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequenc...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise NPN RF Transistor Infineon BFR 193L3 E6327 with RoHS compliance and AEC Q101 certification

Product Overview The BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a min...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise RF transistor Infineon BFR93AWH6327 ideal for in low distortion amplifiers and oscillators

Product Overview The BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain

Product Overview The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-free (...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise silicon bipolar RF transistor Infineon BFR92PE6327 suitable for broadband amplifiers up to 2 GHz

Product Overview The BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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NPN Silicon RF Transistor Infineon BFS 17W H6327 for Broadband Amplifiers up to 1 GHz Collector Current 20 mA

Product Overview The BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS compliant) pac...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Silicon bipolar RF transistor Infineon BFP 193 E6327 featuring AEC Q101 qualification for broadband amplifier

Product Overview The BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise figure silicon bipolar RF transistor Infineon BFR182WH6327XTSA1 broadband amplifier device

Product Overview The BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transi...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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6GHz RF Power Amplifier Module SMA-F 28V 100g With Signal Source RF Jamming Module

RF Power Amplifier Module SMA-F 28V 100g with signal source built-in, RF Jamming module Product Description: RF Power Amplifier Module is a high-performance RF power amplifier with built-in VCO, integrating a h...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

...-Band , RF Low Noise Amplifier LNA , RF Power Amplifier Module Model: VBP2GL VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequency po...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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X-Band RF Power Amplifier Module Wide Operating Temperature Range, Super High Frequency PA High Power High Gain

... amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave ......

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Easy Installation RF Power Amplifier Module 5850MHz - 6425MHz Output Frequency Range

...RF Downconverter , L-Band 950MHz - 1525MHz RF Downconverter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio f...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Military 14.0-14.5GHz ECM Rf Power Amplifier 40MHz

...Rf Power Amplifier Ku Band 14.0GHz to 14.5GHz Frequency range high Power military level Ku Band RF Power Amplifier PA , RF Power Amplifier Module Technical Specifications of Power Amplifier: NO. Item Descrip...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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AD8361ARMZ-REEL7 Rf Power Amplifier Transistor

... Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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5.1-5.2GHz RF Power Amplifier Module Built In VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness

5.1-5.2GHz RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provi...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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100g RF Power Amplifier Module 10-20W Output Power Built In VCO RF Jamming Module

... solution for applications requiring accurate, low-noise amplification. This module offers excellent RF performance with a wide gain range of 30 to 40dB, gain flatness of ≤±0.5dB, noise figure of 2.5dB, VSWR...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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