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....Product Attributes Brand: Fuxin Semiconductor Model: FS13001 Type: NPN Transistor Package: TO-92Technical Specifications Symbol Parameter Test conditions Min Typ Max Unit VCBO Collector-Base Voltage 600 V V...
....Product Attributes Brand: High Diode Semiconductor Package: SOT-23Technical Specifications Parameter Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC= -100A, IE=0 -300 V Coll...
... high-performance transistor characteristics.Product Attributes Brand: HIGH DIODE SEMICONDUCTOR Package Type: SOT-89-3L Molding Compound: GreenTechnical Specifications Symbol Parameter Value Unit Test Condit...
... performance for various electronic circuits.Product Attributes Brand: High Diode Semiconductor Package Type: SOT-23 Transistor Type: PNP Complementary to: S8050Technical Specifications Symbol Parameter Test...
..., making them suitable for AF input stages, driver applications, and general-purpose switching and amplification.Product Attributes Brand: JSMICRO Semiconductor Package: SOT-23Technical Specifications Type N...
... for amplification tasks.Product Attributes Brand: JSMICRO Semiconductor Complementary to: TIP41Technical Specifications Parameter Symbol TIP42 TIP42A TIP42B TIP42C Unit Test Conditions Min Typ Max Collector...
... Brand: JSMICRO Semiconductor Package Type: TO-92 Plastic Package Transistor Type: PNP Silicon TransistorTechnical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector to Base Voltage V...
...current gain characteristics.Product Attributes Brand: JSMICRO Semiconductor Product Type: Transistor (NPN) Package: TO-92Technical Specifications Model Parameter Symbol Test Conditions Min Typ Max Unit 2SD6...
... linear switching applications.Product Attributes Brand: JSMICRO Semiconductor Complementary to: TIP42Technical Specifications Parameter Symbol TIP41 TIP41A TIP41B TIP41C Unit Test Conditions Min Typ Max Abs...
....5 A.Product Attributes Brand: JSMICRO Semiconductor Model: S8050 Type: NPN Silicon General Purpose Transistor Complementary to: S8550Technical Specifications Parameter Symbol Ratings Unit Test Conditions Co...
... (Max. 160V) capabilities.Product Attributes Brand: JSMICRO Semiconductor Model: 2N5401Technical Specifications Symbol Parameter Value Unit Test Conditions MAXIMUM RATINGS VCBO Collector-Base Voltage -160 V ...
...0.2W. This transistor is complementary to the S9015.Product Attributes Brand: JSMICRO Semiconductor Material: Silicon Epitaxial Planar Package: SOT-23Technical Specifications Parameter Symbol Test Conditions...
... and absolute maximum ratings.Product Attributes Brand: JSMICRO Semiconductor Complementary to: S8050Technical Specifications Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Vol...
... for this transistor is M6.Product Attributes Brand: JSMICRO Semiconductor Type: PNP Transistor Complementary to: S9014 Marking: M6Technical Specifications Parameter Symbol Test Conditions Min Max Unit Colle...
... PNP type (MMBT3906) and is available in a SOT-23 package.Product Attributes Brand: JSMICRO Semiconductor Complementary PNP Type: MMBT3906 Package: SOT-23 MSL: 1Technical Specifications Symbol Parameter Cond...
...circuits.Product Attributes Brand: ON Semiconductor Origin: MalaysiaTechnical Specifications Parameter Value Type NPN Maximum Collector Current (Ic) 10 A Maximum Collector-Emitter Voltage (Vce) 60 V Maximum ...
...) transistor and is supplied in a SOT-23 package. Product Attributes Brand: KTP Semiconductor Package: SOT-23 Marking: 497 Technical Specifications Parameter Symbol Test Conditions Min Max Unit Collector-Bas...
...-23 package.Product Attributes Brand: KTP Semiconductor Marking: J3Y Complementary to: S8550 Package: SOT-23Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown...
....Product Attributes Brand: KTP Semiconductor Package: SOT-23 Material: Plastic-Encapsulated Complementary Part: SS8550Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-base...
... technology. By utilizing advanced Gallium Nitride (GaN) semiconductors, this unit achieves a significantly smaller footprint and higher efficiency compared to traditional silicon-based chargers. Featuring a...