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...equipment Specification Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20-70J/cm2 (Deviation≤±2%) Note: 70J/cm...
...equipment professional laser hair removal machine Specification Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density...
...equipment&machine Specification Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20-70J/cm2 (Deviation≤±2%) Note...
...equipment 808nm 810nm diodelaser hair removal Technical Data Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20...
...Equipment Technical Data of 808 diode laser Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20-70J/cm2 (Deviati...
...equipment Specification Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20-70J/cm2 (Deviation≤±2%) Note: 70J/cm...
...equipment Technical Data of 808 diode laser Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20-70J/cm2 (Deviati...
...equipment Specification Laser type Semiconductor laser wavelength 800-810 nm Output Mode pulse output Control Method Touch control Screen Size 10.4 Inch Energy density 20-70J/cm2 (Deviation≤±2%) Note: 70J/cm...
...Equipment Parameter Laser type Semiconductor laser wavelength 808 nm Output Mode pulse output Control Method Touch control Screen Size 8.4 Inch Energy density 20~70J/cm2 (Deviation≤±2%) Pulse width range 1-4...
...equipment Parameter Laser type Semiconductor laser wavelength 808 nm Output Mode pulse output Control Method Touch control Screen Size 8.4 Inch Energy density 20~70J/cm2 (Deviation≤±2%) Pulse width range 1-4...
...~70J/cm2 (Deviation≤±2%) Pulse width range 1-400ms Frequency 1-10HZ Light spot surface temperature 0-30°C Cooling System Semiconductor+built-in water+Air Cooling triple cooling systems...
...equipment laser hair removal Parameter Laser type Semiconductor laser wavelength 808 nm Output Mode pulse output Control Method Touch control Screen Size 8.4 Inch Energy density 20~70J/cm2 (Deviation≤±2%) Pu...
...equipment Parameter Laser type Semiconductor laser wavelength 808 nm Output Mode pulse output Control Method Touch control Screen Size 8.4 Inch Energy density 20~70J/cm2 (Deviation≤±2%) Pulse width range 1-4...
...equipment Technical specifications: Laser type Semiconductor laser wavelength 808 nm Output Mode pulse output Control Method Touch control Screen Size 8.4 Inch Energy density 20~70J/cm2 (Deviation≤±2%) Pulse...
...equipment Parameter Laser type Semiconductor laser wavelength 808 nm Output Mode pulse output Control Method Touch control Screen Size 8.4 Inch Energy density 20~70J/cm2 (Deviation≤±2%) Pulse width range 1-4...
... removal equipment with 0.98kg diode laser handlepiece super cooling system Semiconductor+copper radiator+4 powerful fan 808nm diode laser with CE permanent hair removal suitable for any skins, any color hai...
... heat absorption of light. The equipment is controlled by the computer, there are three main parts: Host, Controlling Panel and Semiconductor Laser Treatment Head. The equipment operation and controlling par...
... heat absorption of light. The equipment is controlled by the computer, there are three main parts: Host, Controlling Panel and Semiconductor Laser Treatment Head. The equipment operation and controlling par...
4H-N Testing grade 6inch dia 150mm silicon carbide single crystal (sic) substrates wafers, sic crystal ingots sic semiconductor substrates,Silicon Carbide crystal Wafer/ Customzied as-cut sic wafers About Silic...
...Semiconductor 1. Abstract Our Sapphire Material 99.999% Al2O3 Monocrystal, produced using the KY (Kyropoulos) method, is a high-quality substrate specifically designed for LED semiconductor applications. Wit...